TY - JOUR
T1 - The direct nano-patterning of ZnO using nanoimprint lithography with ZnO-sol and thermal annealing
AU - Yang, Ki Yeon
AU - Yoon, Kyung Min
AU - Choi, Kyung Woo
AU - Lee, Heon
N1 - Funding Information:
This work was supported by Korea Health 21 R&D Project (Grant No. A050750) from Ministry of Health and Welfare, basic research program from Korea Science and Nano R&D program through the Korea Science and Engineering Foundation funded by the Ministry of Education, Science and Technology (2008-04501).
Copyright:
Copyright 2009 Elsevier B.V., All rights reserved.
PY - 2009/11
Y1 - 2009/11
N2 - Nano-patterned ZnO layer was fabricated by ZnO-sol imprinting with a polymeric mold, followed by annealing. Instead of polymer based imprint resin, ZnO-sol was used as an imprint resin. During the imprinting process, the organic solvent in the ZnO-sol was absorbed into a polymeric mold and thus, ZnO-sol was converted to ZnO-gel. These patterns were subsequently annealed at 650 °C for 1 h in atmospheric ambient to form ZnO patterns. X-ray diffraction (XRD) and photoluminescence (PL) confirmed that ZnO-gel was completely converted into ZnO by annealing. Using this ZnO-sol imprinting method, ZnO nano-patterns, as small as 50 nm, were fabricated on Si and oxidized Si wafer substrates. The ZnO nano-patterns were characterized using scanning electron microscopy (SEM) and Transmission electron microscopy (TEM).
AB - Nano-patterned ZnO layer was fabricated by ZnO-sol imprinting with a polymeric mold, followed by annealing. Instead of polymer based imprint resin, ZnO-sol was used as an imprint resin. During the imprinting process, the organic solvent in the ZnO-sol was absorbed into a polymeric mold and thus, ZnO-sol was converted to ZnO-gel. These patterns were subsequently annealed at 650 °C for 1 h in atmospheric ambient to form ZnO patterns. X-ray diffraction (XRD) and photoluminescence (PL) confirmed that ZnO-gel was completely converted into ZnO by annealing. Using this ZnO-sol imprinting method, ZnO nano-patterns, as small as 50 nm, were fabricated on Si and oxidized Si wafer substrates. The ZnO nano-patterns were characterized using scanning electron microscopy (SEM) and Transmission electron microscopy (TEM).
KW - Nanoimprint lithography
KW - ZnO nano-pattern
KW - ZnO-gel
KW - ZnO-sol
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U2 - 10.1016/j.mee.2009.03.078
DO - 10.1016/j.mee.2009.03.078
M3 - Article
AN - SCOPUS:69749101533
VL - 86
SP - 2228
EP - 2231
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
IS - 11
ER -