Abstract
Nano-patterned ZnO layer was fabricated by ZnO-sol imprinting with a polymeric mold, followed by annealing. Instead of polymer based imprint resin, ZnO-sol was used as an imprint resin. During the imprinting process, the organic solvent in the ZnO-sol was absorbed into a polymeric mold and thus, ZnO-sol was converted to ZnO-gel. These patterns were subsequently annealed at 650 °C for 1 h in atmospheric ambient to form ZnO patterns. X-ray diffraction (XRD) and photoluminescence (PL) confirmed that ZnO-gel was completely converted into ZnO by annealing. Using this ZnO-sol imprinting method, ZnO nano-patterns, as small as 50 nm, were fabricated on Si and oxidized Si wafer substrates. The ZnO nano-patterns were characterized using scanning electron microscopy (SEM) and Transmission electron microscopy (TEM).
| Original language | English |
|---|---|
| Pages (from-to) | 2228-2231 |
| Number of pages | 4 |
| Journal | Microelectronic Engineering |
| Volume | 86 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2009 Nov 1 |
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Keywords
- Nanoimprint lithography
- ZnO nano-pattern
- ZnO-gel
- ZnO-sol
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
Cite this
The direct nano-patterning of ZnO using nanoimprint lithography with ZnO-sol and thermal annealing. / Yang, Ki Yeon; Yoon, Kyung Min; Choi, Kyung Woo; Lee, Heon.
In: Microelectronic Engineering, Vol. 86, No. 11, 01.11.2009, p. 2228-2231.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - The direct nano-patterning of ZnO using nanoimprint lithography with ZnO-sol and thermal annealing
AU - Yang, Ki Yeon
AU - Yoon, Kyung Min
AU - Choi, Kyung Woo
AU - Lee, Heon
PY - 2009/11/1
Y1 - 2009/11/1
N2 - Nano-patterned ZnO layer was fabricated by ZnO-sol imprinting with a polymeric mold, followed by annealing. Instead of polymer based imprint resin, ZnO-sol was used as an imprint resin. During the imprinting process, the organic solvent in the ZnO-sol was absorbed into a polymeric mold and thus, ZnO-sol was converted to ZnO-gel. These patterns were subsequently annealed at 650 °C for 1 h in atmospheric ambient to form ZnO patterns. X-ray diffraction (XRD) and photoluminescence (PL) confirmed that ZnO-gel was completely converted into ZnO by annealing. Using this ZnO-sol imprinting method, ZnO nano-patterns, as small as 50 nm, were fabricated on Si and oxidized Si wafer substrates. The ZnO nano-patterns were characterized using scanning electron microscopy (SEM) and Transmission electron microscopy (TEM).
AB - Nano-patterned ZnO layer was fabricated by ZnO-sol imprinting with a polymeric mold, followed by annealing. Instead of polymer based imprint resin, ZnO-sol was used as an imprint resin. During the imprinting process, the organic solvent in the ZnO-sol was absorbed into a polymeric mold and thus, ZnO-sol was converted to ZnO-gel. These patterns were subsequently annealed at 650 °C for 1 h in atmospheric ambient to form ZnO patterns. X-ray diffraction (XRD) and photoluminescence (PL) confirmed that ZnO-gel was completely converted into ZnO by annealing. Using this ZnO-sol imprinting method, ZnO nano-patterns, as small as 50 nm, were fabricated on Si and oxidized Si wafer substrates. The ZnO nano-patterns were characterized using scanning electron microscopy (SEM) and Transmission electron microscopy (TEM).
KW - Nanoimprint lithography
KW - ZnO nano-pattern
KW - ZnO-gel
KW - ZnO-sol
UR - http://www.scopus.com/inward/record.url?scp=69749101533&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=69749101533&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2009.03.078
DO - 10.1016/j.mee.2009.03.078
M3 - Article
AN - SCOPUS:69749101533
VL - 86
SP - 2228
EP - 2231
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
IS - 11
ER -