The dot size effect of amorphous silicon quantum dot on 1.54-μm Er luminescence

Nae Man Park, Tae Youb Kim, Gun Yong Sung, Baek Hyun Kim, Seong Ju Park, Kwan Sik Cho, Jung H. Shin, Jung Kun Lee, Michael Nastasi

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

The role of the size of amorphous silicon quantum dots in the Er luminescence at 1.54 μm was investigated. As the dot size was increased, the more Er ions were located near one dot due to its large surface area and more Er ions interacted with other ones. This Er-Er interaction caused a weak photoluminescence intensity despite the increase in the effective excitation cross section. The critical dot size, needed to take advantage of the positive effect on Er luminescence, is considered to be about 2.0 nm, below which a small dot is very effective in the efficient luminescence of Er.

Original languageEnglish
Pages (from-to)15-20
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume817
Publication statusPublished - 2004 Oct 27
Externally publishedYes

Fingerprint

Amorphous silicon
Semiconductor quantum dots
amorphous silicon
Luminescence
quantum dots
luminescence
Ions
Photoluminescence
ions
photoluminescence
cross sections
excitation
interactions

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Park, N. M., Kim, T. Y., Sung, G. Y., Kim, B. H., Park, S. J., Cho, K. S., ... Nastasi, M. (2004). The dot size effect of amorphous silicon quantum dot on 1.54-μm Er luminescence. Materials Research Society Symposium - Proceedings, 817, 15-20.

The dot size effect of amorphous silicon quantum dot on 1.54-μm Er luminescence. / Park, Nae Man; Kim, Tae Youb; Sung, Gun Yong; Kim, Baek Hyun; Park, Seong Ju; Cho, Kwan Sik; Shin, Jung H.; Lee, Jung Kun; Nastasi, Michael.

In: Materials Research Society Symposium - Proceedings, Vol. 817, 27.10.2004, p. 15-20.

Research output: Contribution to journalConference article

Park, NM, Kim, TY, Sung, GY, Kim, BH, Park, SJ, Cho, KS, Shin, JH, Lee, JK & Nastasi, M 2004, 'The dot size effect of amorphous silicon quantum dot on 1.54-μm Er luminescence', Materials Research Society Symposium - Proceedings, vol. 817, pp. 15-20.
Park, Nae Man ; Kim, Tae Youb ; Sung, Gun Yong ; Kim, Baek Hyun ; Park, Seong Ju ; Cho, Kwan Sik ; Shin, Jung H. ; Lee, Jung Kun ; Nastasi, Michael. / The dot size effect of amorphous silicon quantum dot on 1.54-μm Er luminescence. In: Materials Research Society Symposium - Proceedings. 2004 ; Vol. 817. pp. 15-20.
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abstract = "The role of the size of amorphous silicon quantum dots in the Er luminescence at 1.54 μm was investigated. As the dot size was increased, the more Er ions were located near one dot due to its large surface area and more Er ions interacted with other ones. This Er-Er interaction caused a weak photoluminescence intensity despite the increase in the effective excitation cross section. The critical dot size, needed to take advantage of the positive effect on Er luminescence, is considered to be about 2.0 nm, below which a small dot is very effective in the efficient luminescence of Er.",
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AU - Sung, Gun Yong

AU - Kim, Baek Hyun

AU - Park, Seong Ju

AU - Cho, Kwan Sik

AU - Shin, Jung H.

AU - Lee, Jung Kun

AU - Nastasi, Michael

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N2 - The role of the size of amorphous silicon quantum dots in the Er luminescence at 1.54 μm was investigated. As the dot size was increased, the more Er ions were located near one dot due to its large surface area and more Er ions interacted with other ones. This Er-Er interaction caused a weak photoluminescence intensity despite the increase in the effective excitation cross section. The critical dot size, needed to take advantage of the positive effect on Er luminescence, is considered to be about 2.0 nm, below which a small dot is very effective in the efficient luminescence of Er.

AB - The role of the size of amorphous silicon quantum dots in the Er luminescence at 1.54 μm was investigated. As the dot size was increased, the more Er ions were located near one dot due to its large surface area and more Er ions interacted with other ones. This Er-Er interaction caused a weak photoluminescence intensity despite the increase in the effective excitation cross section. The critical dot size, needed to take advantage of the positive effect on Er luminescence, is considered to be about 2.0 nm, below which a small dot is very effective in the efficient luminescence of Er.

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