The effect of a shielding layer on breakdown voltage in a trench gate IGBT

Jong Seok Lee, Ho Hyun Shin, Han Sin Lee, Man Young Sung, Ey Goo Kang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

In this paper we introduced the shielding layer concept in order to alleviate the electric field of concentrated on the trench bottom corner. The shielded trench gate IGBT is a trench gate IGBT with a P+ Shielding layer bottom of a trench gate. By simulation results, we verified that a shielding layer reduced the electric fields not only in the gate oxide but in the p-base region. Compared with conventional trench gate IGBT, about 33% increment of forward breakdown voltages are achieved.

Original languageEnglish
Title of host publication7th Internatonal Conference on Power Electronics, ICPE'07
Pages62-65
Number of pages4
DOIs
Publication statusPublished - 2008 Dec 1
Event7th Internatonal Conference on Power Electronics, ICPE'07 - Daegu, Korea, Republic of
Duration: 2007 Oct 222007 Oct 26

Other

Other7th Internatonal Conference on Power Electronics, ICPE'07
CountryKorea, Republic of
CityDaegu
Period07/10/2207/10/26

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ASJC Scopus subject areas

  • Energy Engineering and Power Technology

Cite this

Lee, J. S., Shin, H. H., Lee, H. S., Sung, M. Y., & Kang, E. G. (2008). The effect of a shielding layer on breakdown voltage in a trench gate IGBT. In 7th Internatonal Conference on Power Electronics, ICPE'07 (pp. 62-65). [4692349] https://doi.org/10.1109/ICPE.2007.4692349