The effect of Al-Ta2O5 topographic interface roughness on the leakage current of Ta2O5 thin films

Y. S. Kim, Y. H. Lee, K. M. Lim, M. Y. Sung

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37 Citations (Scopus)


Amorphous Ta2O5 thin films were formed by radio-frequency magnetron sputtering at the substrate temperature of 200°C. The electrical properties of Ta2O5 thin films were investigated as a function of the film thickness. The dominant conduction mechanism transited from the electrode-limited conduction (Schottky emission current) at low field to the bulk-limited conduction (Poole-Frenkel current) at high field. With increasing thickness of the thin films, the surface roughness increased, whereas the transition fields from the electrode-limited to the bulk-limited conduction process decreased. To verify the effect of this surface roughness on the electric conduction mechanism, a two-dimensional numerical simulator, MEDICI, was used to simulate the electric-field distribution at the bulk region of the thin film and the interface region between the thin film and the electrode.

Original languageEnglish
Pages (from-to)2800-2802
Number of pages3
JournalApplied Physics Letters
Issue number19
Publication statusPublished - 1999 May 10

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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