The effect of annealing on amorphous indium gallium zinc oxide thin film transistors

H. S. Bae, J. H. Kwon, S. Chang, M. H. Chung, T. Y. Oh, Jung ho Park, S. Y. Lee, Byeong Kwon Ju

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents the post annealing effects, caused by rapid thermal annealing (RTA), on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor (TFT) 's electrical characteristics, and analyzed its contact resistance (Rc) by using transmission line method (TLM) and atomic force microscope (AFM).

Original languageEnglish
Title of host publicationIDW '09 - Proceedings of the 16th International Display Workshops
Pages1831-1832
Number of pages2
Volume3
Publication statusPublished - 2009 Dec 1
Event16th International Display Workshops, IDW '09 - Miyazaki, Japan
Duration: 2009 Dec 92009 Dec 11

Other

Other16th International Display Workshops, IDW '09
CountryJapan
CityMiyazaki
Period09/12/909/12/11

Fingerprint

Zinc Oxide
Gallium
Indium
Rapid thermal annealing
Thin film transistors
Contact resistance
Zinc oxide
Oxide films
Electric lines
Microscopes
Annealing

ASJC Scopus subject areas

  • Hardware and Architecture
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Bae, H. S., Kwon, J. H., Chang, S., Chung, M. H., Oh, T. Y., Park, J. H., ... Ju, B. K. (2009). The effect of annealing on amorphous indium gallium zinc oxide thin film transistors. In IDW '09 - Proceedings of the 16th International Display Workshops (Vol. 3, pp. 1831-1832)

The effect of annealing on amorphous indium gallium zinc oxide thin film transistors. / Bae, H. S.; Kwon, J. H.; Chang, S.; Chung, M. H.; Oh, T. Y.; Park, Jung ho; Lee, S. Y.; Ju, Byeong Kwon.

IDW '09 - Proceedings of the 16th International Display Workshops. Vol. 3 2009. p. 1831-1832.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bae, HS, Kwon, JH, Chang, S, Chung, MH, Oh, TY, Park, JH, Lee, SY & Ju, BK 2009, The effect of annealing on amorphous indium gallium zinc oxide thin film transistors. in IDW '09 - Proceedings of the 16th International Display Workshops. vol. 3, pp. 1831-1832, 16th International Display Workshops, IDW '09, Miyazaki, Japan, 09/12/9.
Bae HS, Kwon JH, Chang S, Chung MH, Oh TY, Park JH et al. The effect of annealing on amorphous indium gallium zinc oxide thin film transistors. In IDW '09 - Proceedings of the 16th International Display Workshops. Vol. 3. 2009. p. 1831-1832
Bae, H. S. ; Kwon, J. H. ; Chang, S. ; Chung, M. H. ; Oh, T. Y. ; Park, Jung ho ; Lee, S. Y. ; Ju, Byeong Kwon. / The effect of annealing on amorphous indium gallium zinc oxide thin film transistors. IDW '09 - Proceedings of the 16th International Display Workshops. Vol. 3 2009. pp. 1831-1832
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