The effect of annealing on amorphous indium gallium zinc oxide thin film transistors

H. S. Bae, J. H. Kwon, S. Chang, M. H. Chung, T. Y. Oh, J. H. Park, S. Y. Lee, B. K. Ju

Research output: Contribution to conferencePaper

Abstract

This paper presents the post annealing effects, caused by rapid thermal annealing (RTA), on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor (TFT) 's electrical characteristics, and analyzed its contact resistance (Rc) by using transmission line method (TLM) and atomic force microscope (AFM).

Original languageEnglish
Pages1831-1832
Number of pages2
Publication statusPublished - 2009 Dec 1
Event16th International Display Workshops, IDW '09 - Miyazaki, Japan
Duration: 2009 Dec 92009 Dec 11

Other

Other16th International Display Workshops, IDW '09
CountryJapan
CityMiyazaki
Period09/12/909/12/11

ASJC Scopus subject areas

  • Hardware and Architecture
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Bae, H. S., Kwon, J. H., Chang, S., Chung, M. H., Oh, T. Y., Park, J. H., Lee, S. Y., & Ju, B. K. (2009). The effect of annealing on amorphous indium gallium zinc oxide thin film transistors. 1831-1832. Paper presented at 16th International Display Workshops, IDW '09, Miyazaki, Japan.