The effect of annealing on amorphous indium gallium zinc oxide thin film transistors

Hyeon Seok Bae, Jae Hong Kwon, Seongpil Chang, Myung Ho Chung, Tae Yeon Oh, Jung ho Park, Sang Yeol Lee, James Jungho Pak, Byeong Kwon Ju

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

This paper presents the post-annealing effects, caused by rapid thermal annealing (RTA), on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor's (TFT) electrical characteristics, and its contact resistance (RC) with thermally grown SiO2 gate dielectric on silicon wafer substrates. The electrical characteristics of two types of TFTs, one post-annealed and the other not, are compared, and a simple model of the source and drain contacts is applied to estimate the RC by a transmission line method (TLM). Consequently, it has been found that the post-annealing does improve the TFT performances; in other words, the saturation mobility (μsat), the on/off current ratio (ION/OFF), and the drain current (ID) all increase, and the RC and the threshold voltage (VT) both decrease. As-fabricated TFTs have the following electrical characteristics; a saturation mobility (μsat) as large as 0.027 cm2/V s, ION/OFF of 103, sub-threshold swing (SS) of 0.49 V/decade, VT of 32.51 V, and R C of 969 MΩ, and the annealed TFTs have improved electrical characteristics as follows; a μsat of 3.51 cm2/V s, ION/OFF of 105, SS of 0.57 V/decade, VT of 27.2 V, and RC of 847 kΩ.

Original languageEnglish
Pages (from-to)6325-6329
Number of pages5
JournalThin Solid Films
Volume518
Issue number22
DOIs
Publication statusPublished - 2010 Sep 1

Fingerprint

Zinc Oxide
gallium oxides
Gallium
Indium
Thin film transistors
Zinc oxide
zinc oxides
Oxide films
indium
transistors
Annealing
annealing
Rapid thermal annealing
Gate dielectrics
Drain current
Electric potential
Contact resistance
thin films
saturation
Silicon wafers

Keywords

  • Amorphous indium gallium zinc oxide
  • Contact resistance
  • Oxide thin film transistor
  • Rapid thermal annealing
  • Transmission line method (TLM)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

The effect of annealing on amorphous indium gallium zinc oxide thin film transistors. / Bae, Hyeon Seok; Kwon, Jae Hong; Chang, Seongpil; Chung, Myung Ho; Oh, Tae Yeon; Park, Jung ho; Lee, Sang Yeol; Pak, James Jungho; Ju, Byeong Kwon.

In: Thin Solid Films, Vol. 518, No. 22, 01.09.2010, p. 6325-6329.

Research output: Contribution to journalArticle

Bae, Hyeon Seok ; Kwon, Jae Hong ; Chang, Seongpil ; Chung, Myung Ho ; Oh, Tae Yeon ; Park, Jung ho ; Lee, Sang Yeol ; Pak, James Jungho ; Ju, Byeong Kwon. / The effect of annealing on amorphous indium gallium zinc oxide thin film transistors. In: Thin Solid Films. 2010 ; Vol. 518, No. 22. pp. 6325-6329.
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AB - This paper presents the post-annealing effects, caused by rapid thermal annealing (RTA), on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor's (TFT) electrical characteristics, and its contact resistance (RC) with thermally grown SiO2 gate dielectric on silicon wafer substrates. The electrical characteristics of two types of TFTs, one post-annealed and the other not, are compared, and a simple model of the source and drain contacts is applied to estimate the RC by a transmission line method (TLM). Consequently, it has been found that the post-annealing does improve the TFT performances; in other words, the saturation mobility (μsat), the on/off current ratio (ION/OFF), and the drain current (ID) all increase, and the RC and the threshold voltage (VT) both decrease. As-fabricated TFTs have the following electrical characteristics; a saturation mobility (μsat) as large as 0.027 cm2/V s, ION/OFF of 103, sub-threshold swing (SS) of 0.49 V/decade, VT of 32.51 V, and R C of 969 MΩ, and the annealed TFTs have improved electrical characteristics as follows; a μsat of 3.51 cm2/V s, ION/OFF of 105, SS of 0.57 V/decade, VT of 27.2 V, and RC of 847 kΩ.

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