The effect of annealing on amorphous indium gallium zinc oxide thin film transistors

Hyeon Seok Bae; Jae Hong Kwon; Seongpil Chang; Myung Ho Chung; Tae Yeon Oh; Jung Ho Park; Sang Yeol Lee; James Jungho Pak; Byeong Kwon Ju

doi:10.1016/j.tsf.2010.02.073

The effect of annealing on amorphous indium gallium zinc oxide thin film transistors

Hyeon Seok Bae, Jae Hong Kwon, Seongpil Chang, Myung Ho Chung, Tae Yeon Oh, Jung Ho Park, Sang Yeol Lee, James Jungho Pak, Byeong Kwon Ju

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

This paper presents the post-annealing effects, caused by rapid thermal annealing (RTA), on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor's (TFT) electrical characteristics, and its contact resistance (R_C) with thermally grown SiO₂ gate dielectric on silicon wafer substrates. The electrical characteristics of two types of TFTs, one post-annealed and the other not, are compared, and a simple model of the source and drain contacts is applied to estimate the R_C by a transmission line method (TLM). Consequently, it has been found that the post-annealing does improve the TFT performances; in other words, the saturation mobility (μ_sat), the on/off current ratio (I_ON/OFF), and the drain current (I_D) all increase, and the R_C and the threshold voltage (V_T) both decrease. As-fabricated TFTs have the following electrical characteristics; a saturation mobility (μ_sat) as large as 0.027 cm²/V s, I_ON/OFF of 10³, sub-threshold swing (SS) of 0.49 V/decade, V_T of 32.51 V, and R _C of 969 MΩ, and the annealed TFTs have improved electrical characteristics as follows; a μ_sat of 3.51 cm²/V s, I_ON/OFF of 10⁵, SS of 0.57 V/decade, V_T of 27.2 V, and R_C of 847 kΩ.

Original language	English
Pages (from-to)	6325-6329
Number of pages	5
Journal	Thin Solid Films
Volume	518
Issue number	22
DOIs	https://doi.org/10.1016/j.tsf.2010.02.073
Publication status	Published - 2010 Sept 1

Keywords

Amorphous indium gallium zinc oxide
Contact resistance
Oxide thin film transistor
Rapid thermal annealing
Transmission line method (TLM)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2010.02.073

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title = "The effect of annealing on amorphous indium gallium zinc oxide thin film transistors",

abstract = "This paper presents the post-annealing effects, caused by rapid thermal annealing (RTA), on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor's (TFT) electrical characteristics, and its contact resistance (RC) with thermally grown SiO2 gate dielectric on silicon wafer substrates. The electrical characteristics of two types of TFTs, one post-annealed and the other not, are compared, and a simple model of the source and drain contacts is applied to estimate the RC by a transmission line method (TLM). Consequently, it has been found that the post-annealing does improve the TFT performances; in other words, the saturation mobility (μsat), the on/off current ratio (ION/OFF), and the drain current (ID) all increase, and the RC and the threshold voltage (VT) both decrease. As-fabricated TFTs have the following electrical characteristics; a saturation mobility (μsat) as large as 0.027 cm2/V s, ION/OFF of 103, sub-threshold swing (SS) of 0.49 V/decade, VT of 32.51 V, and R C of 969 MΩ, and the annealed TFTs have improved electrical characteristics as follows; a μsat of 3.51 cm2/V s, ION/OFF of 105, SS of 0.57 V/decade, VT of 27.2 V, and RC of 847 kΩ.",

keywords = "Amorphous indium gallium zinc oxide, Contact resistance, Oxide thin film transistor, Rapid thermal annealing, Transmission line method (TLM)",

author = "Bae, {Hyeon Seok} and Kwon, {Jae Hong} and Seongpil Chang and Chung, {Myung Ho} and Oh, {Tae Yeon} and Park, {Jung Ho} and Lee, {Sang Yeol} and Pak, {James Jungho} and Ju, {Byeong Kwon}",

year = "2010",

month = sep,

day = "1",

doi = "10.1016/j.tsf.2010.02.073",

language = "English",

volume = "518",

pages = "6325--6329",

journal = "Thin Solid Films",

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T1 - The effect of annealing on amorphous indium gallium zinc oxide thin film transistors

AU - Bae, Hyeon Seok

AU - Kwon, Jae Hong

AU - Chang, Seongpil

AU - Chung, Myung Ho

AU - Oh, Tae Yeon

AU - Park, Jung Ho

AU - Lee, Sang Yeol

AU - Pak, James Jungho

AU - Ju, Byeong Kwon

PY - 2010/9/1

Y1 - 2010/9/1

N2 - This paper presents the post-annealing effects, caused by rapid thermal annealing (RTA), on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor's (TFT) electrical characteristics, and its contact resistance (RC) with thermally grown SiO2 gate dielectric on silicon wafer substrates. The electrical characteristics of two types of TFTs, one post-annealed and the other not, are compared, and a simple model of the source and drain contacts is applied to estimate the RC by a transmission line method (TLM). Consequently, it has been found that the post-annealing does improve the TFT performances; in other words, the saturation mobility (μsat), the on/off current ratio (ION/OFF), and the drain current (ID) all increase, and the RC and the threshold voltage (VT) both decrease. As-fabricated TFTs have the following electrical characteristics; a saturation mobility (μsat) as large as 0.027 cm2/V s, ION/OFF of 103, sub-threshold swing (SS) of 0.49 V/decade, VT of 32.51 V, and R C of 969 MΩ, and the annealed TFTs have improved electrical characteristics as follows; a μsat of 3.51 cm2/V s, ION/OFF of 105, SS of 0.57 V/decade, VT of 27.2 V, and RC of 847 kΩ.

AB - This paper presents the post-annealing effects, caused by rapid thermal annealing (RTA), on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor's (TFT) electrical characteristics, and its contact resistance (RC) with thermally grown SiO2 gate dielectric on silicon wafer substrates. The electrical characteristics of two types of TFTs, one post-annealed and the other not, are compared, and a simple model of the source and drain contacts is applied to estimate the RC by a transmission line method (TLM). Consequently, it has been found that the post-annealing does improve the TFT performances; in other words, the saturation mobility (μsat), the on/off current ratio (ION/OFF), and the drain current (ID) all increase, and the RC and the threshold voltage (VT) both decrease. As-fabricated TFTs have the following electrical characteristics; a saturation mobility (μsat) as large as 0.027 cm2/V s, ION/OFF of 103, sub-threshold swing (SS) of 0.49 V/decade, VT of 32.51 V, and R C of 969 MΩ, and the annealed TFTs have improved electrical characteristics as follows; a μsat of 3.51 cm2/V s, ION/OFF of 105, SS of 0.57 V/decade, VT of 27.2 V, and RC of 847 kΩ.

KW - Amorphous indium gallium zinc oxide

KW - Contact resistance

KW - Oxide thin film transistor

KW - Rapid thermal annealing

KW - Transmission line method (TLM)

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ER -

The effect of annealing on amorphous indium gallium zinc oxide thin film transistors

Abstract

Keywords

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