The effect of carbon-doped In3Sb1Te2 ternary alloys for multibit (MLC) phase-change memory

Hyun Soo Kim; Yong Tae Kim; Ha Sub Hwang; Man Young Sung

doi:10.1002/pssr.201308211

The effect of carbon-doped In₃Sb₁Te₂ ternary alloys for multibit (MLC) phase-change memory

Hyun Soo Kim, Yong Tae Kim, Ha Sub Hwang, Man Young Sung

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

One of the candidate materials for phase-change memory, In₃Sb₁Te₂ (IST), shows multilevel phase transformations from amorphous to several crystalline materials of IST, intermediate phases such as InSb, SbTe and InTe. However, its volume can change abruptly in the multilevel phase transformation, and this change can lead to vacancy movement and atomic migration, which are related to failures and reliability issues. We propose the carbon-incorporated In₃Sb₁Te₂ (IST-C) alloy, which has higher retention ability than the IST ternary alloy. Carbon atoms delay crystallization and prevent volume change during the set/reset operation. The carbon concen- tration is 12.5%, and the activation energy increases from 5.1 eV to 5.4 eV.

Original language	English
Pages (from-to)	243-247
Number of pages	5
Journal	Physica Status Solidi - Rapid Research Letters
Volume	8
Issue number	3
DOIs	https://doi.org/10.1002/pssr.201308211
Publication status	Published - 2014 Jan 1

ASJC Scopus subject areas

Condensed Matter Physics
Materials Science(all)

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10.1002/pssr.201308211

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abstract = "One of the candidate materials for phase-change memory, In3Sb1Te2 (IST), shows multilevel phase transformations from amorphous to several crystalline materials of IST, intermediate phases such as InSb, SbTe and InTe. However, its volume can change abruptly in the multilevel phase transformation, and this change can lead to vacancy movement and atomic migration, which are related to failures and reliability issues. We propose the carbon-incorporated In3Sb1Te2 (IST-C) alloy, which has higher retention ability than the IST ternary alloy. Carbon atoms delay crystallization and prevent volume change during the set/reset operation. The carbon concen- tration is 12.5%, and the activation energy increases from 5.1 eV to 5.4 eV.",

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T1 - The effect of carbon-doped In3Sb1Te2 ternary alloys for multibit (MLC) phase-change memory

AU - Kim, Hyun Soo

AU - Kim, Yong Tae

AU - Hwang, Ha Sub

AU - Sung, Man Young

PY - 2014/1/1

Y1 - 2014/1/1

N2 - One of the candidate materials for phase-change memory, In3Sb1Te2 (IST), shows multilevel phase transformations from amorphous to several crystalline materials of IST, intermediate phases such as InSb, SbTe and InTe. However, its volume can change abruptly in the multilevel phase transformation, and this change can lead to vacancy movement and atomic migration, which are related to failures and reliability issues. We propose the carbon-incorporated In3Sb1Te2 (IST-C) alloy, which has higher retention ability than the IST ternary alloy. Carbon atoms delay crystallization and prevent volume change during the set/reset operation. The carbon concen- tration is 12.5%, and the activation energy increases from 5.1 eV to 5.4 eV.

AB - One of the candidate materials for phase-change memory, In3Sb1Te2 (IST), shows multilevel phase transformations from amorphous to several crystalline materials of IST, intermediate phases such as InSb, SbTe and InTe. However, its volume can change abruptly in the multilevel phase transformation, and this change can lead to vacancy movement and atomic migration, which are related to failures and reliability issues. We propose the carbon-incorporated In3Sb1Te2 (IST-C) alloy, which has higher retention ability than the IST ternary alloy. Carbon atoms delay crystallization and prevent volume change during the set/reset operation. The carbon concen- tration is 12.5%, and the activation energy increases from 5.1 eV to 5.4 eV.

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KW - Doping

KW - HRTEM

KW - Phase-change memory

KW - Transmission electron microscopy

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The effect of carbon-doped In₃Sb₁Te₂ ternary alloys for multibit (MLC) phase-change memory

Abstract

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