The effect of carbon-doped In3Sb1Te2 ternary alloys for multibit (MLC) phase-change memory

Hyun Soo Kim; Yong Tae Kim; Ha Sub Hwang; Man Young Sung

doi:10.1002/pssr.201308211

The effect of carbon-doped In₃Sb₁Te₂ ternary alloys for multibit (MLC) phase-change memory

Hyun Soo Kim, Yong Tae Kim, Ha Sub Hwang, Man Young Sung

* Honorary professors

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

One of the candidate materials for phase-change memory, In₃Sb₁Te₂ (IST), shows multilevel phase transformations from amorphous to several crystalline materials of IST, intermediate phases such as InSb, SbTe and InTe. However, its volume can change abruptly in the multilevel phase transformation, and this change can lead to vacancy movement and atomic migration, which are related to failures and reliability issues. We propose the carbon-incorporated In₃Sb₁Te₂ (IST-C) alloy, which has higher retention ability than the IST ternary alloy. Carbon atoms delay crystallization and prevent volume change during the set/reset operation. The carbon concen- tration is 12.5%, and the activation energy increases from 5.1 eV to 5.4 eV.

Original language	English
Pages (from-to)	243-247
Number of pages	5
Journal	Physica Status Solidi - Rapid Research Letters
Volume	8
Issue number	3
DOIs	https://doi.org/10.1002/pssr.201308211
Publication status	Published - 2014 Mar

Keywords

Carbon
Doping
HRTEM
Phase-change memory
Transmission electron microscopy

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics

Access to Document

10.1002/pssr.201308211

Cite this

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title = "The effect of carbon-doped In3Sb1Te2 ternary alloys for multibit (MLC) phase-change memory",

abstract = "One of the candidate materials for phase-change memory, In3Sb1Te2 (IST), shows multilevel phase transformations from amorphous to several crystalline materials of IST, intermediate phases such as InSb, SbTe and InTe. However, its volume can change abruptly in the multilevel phase transformation, and this change can lead to vacancy movement and atomic migration, which are related to failures and reliability issues. We propose the carbon-incorporated In3Sb1Te2 (IST-C) alloy, which has higher retention ability than the IST ternary alloy. Carbon atoms delay crystallization and prevent volume change during the set/reset operation. The carbon concen- tration is 12.5%, and the activation energy increases from 5.1 eV to 5.4 eV.",

keywords = "Carbon, Doping, HRTEM, Phase-change memory, Transmission electron microscopy",

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T1 - The effect of carbon-doped In3Sb1Te2 ternary alloys for multibit (MLC) phase-change memory

AU - Kim, Hyun Soo

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AU - Hwang, Ha Sub

AU - Sung, Man Young

PY - 2014/3

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AB - One of the candidate materials for phase-change memory, In3Sb1Te2 (IST), shows multilevel phase transformations from amorphous to several crystalline materials of IST, intermediate phases such as InSb, SbTe and InTe. However, its volume can change abruptly in the multilevel phase transformation, and this change can lead to vacancy movement and atomic migration, which are related to failures and reliability issues. We propose the carbon-incorporated In3Sb1Te2 (IST-C) alloy, which has higher retention ability than the IST ternary alloy. Carbon atoms delay crystallization and prevent volume change during the set/reset operation. The carbon concen- tration is 12.5%, and the activation energy increases from 5.1 eV to 5.4 eV.

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KW - Doping

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KW - Phase-change memory

KW - Transmission electron microscopy

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