The effect of carrier density on magnetic anisotropy of the ferromagnetic semiconductor (Ga, Mn)As

Sunjae Chung, H. C. Kim, Sang Hoon Lee, X. Liu, J. K. Furdyna

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Planar Hall effect (PHE) measurements are used to investigate magnetic anisotropy in two (Ga, Mn)As samples which differ by the hole concentration, but are otherwise identical. The difference in the hole density is controlled via modulation doping by Be. Angular dependence of PHE measured at 13 K reveals that the uniaxial easy axis in the sample with a lower hole concentration lies along the [110] direction, and along [over(1, ̄) 10] in the sample with higher doping. This difference in the orientation of uniaxial easy axes in the two samples demonstrates that the magnetization of GaMnAs can be manipulated just by varying the carrier density.

Original languageEnglish
Pages (from-to)1739-1742
Number of pages4
JournalSolid State Communications
Volume149
Issue number41-42
DOIs
Publication statusPublished - 2009 Nov 1

Fingerprint

Hole concentration
Magnetic anisotropy
Hall effect
Carrier concentration
Doping (additives)
Semiconductor materials
anisotropy
Magnetization
Modulation
modulation doping
magnetization
Direction compound

Keywords

  • A. Ferromagnetism
  • A. Semiconductor
  • D. Anisotropy
  • E. Planar Hall effect

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Chemistry

Cite this

The effect of carrier density on magnetic anisotropy of the ferromagnetic semiconductor (Ga, Mn)As. / Chung, Sunjae; Kim, H. C.; Lee, Sang Hoon; Liu, X.; Furdyna, J. K.

In: Solid State Communications, Vol. 149, No. 41-42, 01.11.2009, p. 1739-1742.

Research output: Contribution to journalArticle

Chung, Sunjae ; Kim, H. C. ; Lee, Sang Hoon ; Liu, X. ; Furdyna, J. K. / The effect of carrier density on magnetic anisotropy of the ferromagnetic semiconductor (Ga, Mn)As. In: Solid State Communications. 2009 ; Vol. 149, No. 41-42. pp. 1739-1742.
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