The effect of Cl-doping concentration on the resistivity of polycrystalline CdZnTe:Cl thick film

Y. J. Park, Kihyun Kim, Y. H. Na, T. R. Jung, S. U. Kim

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Polycrystalline CdZnTe thick films were grown by thermal evaporation method using CdZnTe and CdZnTe:Cl source. We obtained polycrystalline CdZnTe thick films having high resisitivity (5 × 109 ω ̇cm) similar that of single crystals. Cl-doped polycrystalline CdZnTe thick films(Cl : 100, 200, 300, 400 ppm) were prepared on polished graphite substrate keeping substrate temperature between 350 - 500 °C. The average grain size and resistivity are similar each other. This paper present the effect of Cl-doping on the resistivity of polycrystalline CdZnTe thick films.

Original languageEnglish
Pages (from-to)4425-4427
Number of pages3
JournalIEEE Nuclear Science Symposium Conference Record
Volume7
Publication statusPublished - 2004 Dec 1
Externally publishedYes
Event2004 Nuclear Science Symposium, Medical Imaging Conference, Symposium on Nuclear Power Systems and the 14th International Workshop on Room Temperature Semiconductor X- and Gamma- Ray Detectors - Rome, Italy
Duration: 2004 Oct 162004 Oct 22

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ASJC Scopus subject areas

  • Radiation
  • Nuclear and High Energy Physics
  • Radiology Nuclear Medicine and imaging

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