The effect of direct current bias on the characteristics of Cu/C: H composite thin films on poly ethylene terephthalate film prepared by electron cyclotron resonance-metal organic chemical vapor deposition

Bup Ju Jeon, Hyungduk Ko, Jin Hyun, Dong Jin Byun, Joong Kee Lee

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Cu/C:H composite films were prepared on poly ethylene terephthalate (PET) substrate at room temperature by the electron cyclotron resonance-metal organic chemical vapor deposition (ECR-MOCVD) coupled with a negative direct current (DC) bias system. The negative DC bias voltage applied around the substrate strongly affected the crystallographic structure and composition as well as the surface roughness of the copper films. The surface resistivity of films decrease sharply as the bias voltage increase up to about 5 μΩ-cm below which the resistivity remains almost constant in the range of - 900 to - 1700 V. Thus, the bias voltage appeared to be a critical deposition parameter for preparing copper films with low resistivity. With interfacial studies of Cu-PET, copper atoms are embedded into the polymer substrate during the growth process. Therefore, Cu/C:H composite films on PET with good interfacial properties could be prepared by ECR-MOCVD coupled with a (-)DC bias system.

Original languageEnglish
Pages (from-to)395-401
Number of pages7
JournalThin Solid Films
Volume496
Issue number2
DOIs
Publication statusPublished - 2006 Feb 21

Fingerprint

Organic Chemicals
Polyethylene Terephthalates
Electron cyclotron resonance
Bias currents
polyethylene terephthalate
Organic chemicals
Composite films
electron cyclotron resonance
Bias voltage
Polyethylene terephthalates
metalorganic chemical vapor deposition
Copper
Chemical vapor deposition
Metals
direct current
Thin films
composite materials
Substrates
thin films
copper

Keywords

  • Chemical vapor deposition
  • Copper
  • Polyethylene terephthalate
  • Surface structure

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

@article{51cfa01c120f444fa3006e30abc22d31,
title = "The effect of direct current bias on the characteristics of Cu/C: H composite thin films on poly ethylene terephthalate film prepared by electron cyclotron resonance-metal organic chemical vapor deposition",
abstract = "Cu/C:H composite films were prepared on poly ethylene terephthalate (PET) substrate at room temperature by the electron cyclotron resonance-metal organic chemical vapor deposition (ECR-MOCVD) coupled with a negative direct current (DC) bias system. The negative DC bias voltage applied around the substrate strongly affected the crystallographic structure and composition as well as the surface roughness of the copper films. The surface resistivity of films decrease sharply as the bias voltage increase up to about 5 μΩ-cm below which the resistivity remains almost constant in the range of - 900 to - 1700 V. Thus, the bias voltage appeared to be a critical deposition parameter for preparing copper films with low resistivity. With interfacial studies of Cu-PET, copper atoms are embedded into the polymer substrate during the growth process. Therefore, Cu/C:H composite films on PET with good interfacial properties could be prepared by ECR-MOCVD coupled with a (-)DC bias system.",
keywords = "Chemical vapor deposition, Copper, Polyethylene terephthalate, Surface structure",
author = "Jeon, {Bup Ju} and Hyungduk Ko and Jin Hyun and Byun, {Dong Jin} and Lee, {Joong Kee}",
year = "2006",
month = "2",
day = "21",
doi = "10.1016/j.tsf.2005.09.095",
language = "English",
volume = "496",
pages = "395--401",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "2",

}

TY - JOUR

T1 - The effect of direct current bias on the characteristics of Cu/C

T2 - H composite thin films on poly ethylene terephthalate film prepared by electron cyclotron resonance-metal organic chemical vapor deposition

AU - Jeon, Bup Ju

AU - Ko, Hyungduk

AU - Hyun, Jin

AU - Byun, Dong Jin

AU - Lee, Joong Kee

PY - 2006/2/21

Y1 - 2006/2/21

N2 - Cu/C:H composite films were prepared on poly ethylene terephthalate (PET) substrate at room temperature by the electron cyclotron resonance-metal organic chemical vapor deposition (ECR-MOCVD) coupled with a negative direct current (DC) bias system. The negative DC bias voltage applied around the substrate strongly affected the crystallographic structure and composition as well as the surface roughness of the copper films. The surface resistivity of films decrease sharply as the bias voltage increase up to about 5 μΩ-cm below which the resistivity remains almost constant in the range of - 900 to - 1700 V. Thus, the bias voltage appeared to be a critical deposition parameter for preparing copper films with low resistivity. With interfacial studies of Cu-PET, copper atoms are embedded into the polymer substrate during the growth process. Therefore, Cu/C:H composite films on PET with good interfacial properties could be prepared by ECR-MOCVD coupled with a (-)DC bias system.

AB - Cu/C:H composite films were prepared on poly ethylene terephthalate (PET) substrate at room temperature by the electron cyclotron resonance-metal organic chemical vapor deposition (ECR-MOCVD) coupled with a negative direct current (DC) bias system. The negative DC bias voltage applied around the substrate strongly affected the crystallographic structure and composition as well as the surface roughness of the copper films. The surface resistivity of films decrease sharply as the bias voltage increase up to about 5 μΩ-cm below which the resistivity remains almost constant in the range of - 900 to - 1700 V. Thus, the bias voltage appeared to be a critical deposition parameter for preparing copper films with low resistivity. With interfacial studies of Cu-PET, copper atoms are embedded into the polymer substrate during the growth process. Therefore, Cu/C:H composite films on PET with good interfacial properties could be prepared by ECR-MOCVD coupled with a (-)DC bias system.

KW - Chemical vapor deposition

KW - Copper

KW - Polyethylene terephthalate

KW - Surface structure

UR - http://www.scopus.com/inward/record.url?scp=28144451548&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28144451548&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2005.09.095

DO - 10.1016/j.tsf.2005.09.095

M3 - Article

AN - SCOPUS:28144451548

VL - 496

SP - 395

EP - 401

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 2

ER -