The effect of growth temperature on the epitaxial growth by chemical vapor deposition of vertically aligned ZnO nanowires

So Young Yim, Do Han Lee, Samseok Jang, A. Young Kim, Dong Jin Byun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Vertically aligned single-crystal ZnO nanowires have been successfully grown on c-plane sapphire substrate using chemical vapor deposition (CVD) without catalyst. According to growth temperatures, it was changed ZnO growth characteristic. We investigated the effect of substrate temperatures on the growth ZnO films or nanowires on c-plane (0001) sapphire substrates. The ZnO films were acquired at 500°C, whereas the ZnO nanowires were obtained at 600°C, 700°C, and 800°C. The growth behavior diameter and growth rate of ZnO were changed due to different temperature. As a result of analyzing in-plane residual stress by X-ray diffraction, the optimized condition of ZnO nanowires were at 600°C.

Original languageEnglish
Title of host publicationICCM International Conferences on Composite Materials
Publication statusPublished - 2011 Dec 1
Event18th International Conference on Composites Materials, ICCM 2011 - Jeju, Korea, Republic of
Duration: 2011 Aug 212011 Aug 26

Other

Other18th International Conference on Composites Materials, ICCM 2011
CountryKorea, Republic of
CityJeju
Period11/8/2111/8/26

Keywords

  • Chemical vapor deposition
  • Compressive stress
  • Nanowires
  • ZnO

ASJC Scopus subject areas

  • Engineering(all)
  • Ceramics and Composites

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  • Cite this

    Yim, S. Y., Lee, D. H., Jang, S., Kim, A. Y., & Byun, D. J. (2011). The effect of growth temperature on the epitaxial growth by chemical vapor deposition of vertically aligned ZnO nanowires. In ICCM International Conferences on Composite Materials