The Effect of Low-Temperature Annealing on a CdZnTe Detector

Kihyun Kim, Seokjin Hwang, Petro Fochuk, L. Nasi, Andrea Zappettini, A. E. Bolotnikov, R. B. James

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

It is known that low temperature annealing at below 200 °C decreases the leakage current in a CdTe and CdZnTe (CZT) detector. However, only CZT detectors which have electrodes made by electroless method and low temperature annealing in the air showed diminished leakage current after annealing. With the aid of an in-situ annealing monitoring system, we measured the leakage current of a CZT detector while carrying out low-temperature annealing. A decrease in the leakage current resulted from the presence of thin insulating Te oxide layers, TeO2 and CdTeO3, instead of CZT/electrode interface enhancement by diffusion of Au. Other measurement results of Auger electron spectroscopy, micro TEM analysis, and pulse height spectrum were in good agreement with our new interpretation of the low temperature annealing effects of CZT.

Original languageEnglish
Article number7497457
Pages (from-to)2278-2282
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume63
Issue number4
DOIs
Publication statusPublished - 2016 Aug 1

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Keywords

  • Cdteo3
  • Cdznte
  • gamma-ray detector
  • low temperature annealing
  • seedless THM

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Kim, K., Hwang, S., Fochuk, P., Nasi, L., Zappettini, A., Bolotnikov, A. E., & James, R. B. (2016). The Effect of Low-Temperature Annealing on a CdZnTe Detector. IEEE Transactions on Nuclear Science, 63(4), 2278-2282. [7497457]. https://doi.org/10.1109/TNS.2016.2583546