The effect of post-fabrication annealing on an amorphous IGZO visible-light photodetector

Yongkook Park, Hyung Youl Park, Dong Ho Kang, Gwang Sik Kim, Donghwan Lim, Hyun-Yong Yu, Changhwan Choi, Jin Hong Park

Research output: Contribution to journalArticle

Abstract

We demonstrate the effect of the thermal annealing temperature (250 and 300°C) on the performance (photosensitivity and temporal photoresponse) of an amorphous indium-gallium-zinc-oxide (α-IGZO) photodetector based on the TFT structure to visible radiation. Analysis of photosensitivity was performed to assess various sensing parameters, such as photoresponsivity (Rph), threshold voltage (VTH) shift, and subthreshold swing (SS). The photosensitivity was improved as the wavelength of light decreased and the annealing temperature increased. This was analyzed based on the activation energy for the ionization of an oxygen vacancy (Vo) and the concentration of Vo in relation to the thermal annealing condition. The temporal photoresponse of the α-IGZO device are also presented. The photoresponse times improved as the annealing temperature increased, which was due to the increase in the concentration of Vo functioning as a generation and recombination center with increasing annealing temperature.

Original languageEnglish
Pages (from-to)11745-11749
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume16
Issue number11
DOIs
Publication statusPublished - 2016

Fingerprint

Photodetectors
photometers
Photosensitivity
Annealing
photosensitivity
Light
Fabrication
fabrication
Temperature
annealing
Hot Temperature
Zinc Oxide
Indium
gallium oxides
Gallium
temperature
Genetic Recombination
Oxygen vacancies
Zinc oxide
Threshold voltage

Keywords

  • Amorphous IGZO
  • Oxygen vacancy
  • Photodetector
  • Thermal annealing

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

The effect of post-fabrication annealing on an amorphous IGZO visible-light photodetector. / Park, Yongkook; Park, Hyung Youl; Kang, Dong Ho; Kim, Gwang Sik; Lim, Donghwan; Yu, Hyun-Yong; Choi, Changhwan; Park, Jin Hong.

In: Journal of Nanoscience and Nanotechnology, Vol. 16, No. 11, 2016, p. 11745-11749.

Research output: Contribution to journalArticle

Park, Yongkook ; Park, Hyung Youl ; Kang, Dong Ho ; Kim, Gwang Sik ; Lim, Donghwan ; Yu, Hyun-Yong ; Choi, Changhwan ; Park, Jin Hong. / The effect of post-fabrication annealing on an amorphous IGZO visible-light photodetector. In: Journal of Nanoscience and Nanotechnology. 2016 ; Vol. 16, No. 11. pp. 11745-11749.
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AB - We demonstrate the effect of the thermal annealing temperature (250 and 300°C) on the performance (photosensitivity and temporal photoresponse) of an amorphous indium-gallium-zinc-oxide (α-IGZO) photodetector based on the TFT structure to visible radiation. Analysis of photosensitivity was performed to assess various sensing parameters, such as photoresponsivity (Rph), threshold voltage (VTH) shift, and subthreshold swing (SS). The photosensitivity was improved as the wavelength of light decreased and the annealing temperature increased. This was analyzed based on the activation energy for the ionization of an oxygen vacancy (Vo) and the concentration of Vo in relation to the thermal annealing condition. The temporal photoresponse of the α-IGZO device are also presented. The photoresponse times improved as the annealing temperature increased, which was due to the increase in the concentration of Vo functioning as a generation and recombination center with increasing annealing temperature.

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