The effect of substrate surface morphology on GaN by MOCVD

Dong Wha Kum, Dong Jin Byun, Gyeungho Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Efficiency and lifetime of light emitting diodes (LEDs) and laser diodes (LDs) inversely depend on defect density of the crystal. Reduction of defect density is accomplished by proper choice of the substrate or deliberate modification of substrate surface. Roughness of substrate surface for GaN deposition can be controlled by buffer growth and/or nitridation. Buffer layers or nitrided layers promote lateral growth of films due to decrease in interfacial free energy between the film and substrate. Optimum conditions for GaN-buffer growth on the vicinal surface of 6H-SiC (0001) were determined by means of atomic force microscopy (AFM). AFM analysis of nitridated sapphire surfaces was also carried out to find the optimum condition for nitridation of sapphire substrate before GaN deposition. Nitridation of sapphires was performed only with nitrogen. Based on the fact that GaN deposited on more smooth surface exhibited the better crystal quality and optical property, use of AFM roughness as a reliable criterion is suggested for process optimization of GaN film growth by metallorganic chemical vapor deposition.

Original languageEnglish
JournalJournal of the Korean Physical Society
Volume30
Issue numberSUPPL. PART 1
Publication statusPublished - 1997 Dec 1
Externally publishedYes

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metalorganic chemical vapor deposition
sapphire
buffers
atomic force microscopy
roughness
defects
crystals
light emitting diodes
semiconductor lasers
free energy
vapor deposition
optical properties
nitrogen
life (durability)
optimization

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

The effect of substrate surface morphology on GaN by MOCVD. / Kum, Dong Wha; Byun, Dong Jin; Kim, Gyeungho.

In: Journal of the Korean Physical Society, Vol. 30, No. SUPPL. PART 1, 01.12.1997.

Research output: Contribution to journalArticle

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