The effect of substrate surface roughness on GaN growth using MOCVD process

Dongwha Kum, Dong Jin Byun

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Efficiency and lifetime of light emitting diodes and laser diodes inversely depend on defect density of the crystal, and reduction of defect density is accomplished by a proper choice of substrate or a deliberate modification of the substrate surface. Buffer growth or nitridation can yield an atomically flat surface and the roughness of a substrate surface for GaN deposition can be controlled by either method such that lateral film growth can be promoted. The effect of nanoscale surface roughness on photoluminescence and crystal quality of GaN/Al2O3(0001) has been studied. The optimal conditions for N2-nitridation or/and GaN-buffer growth correlate well with the minimum surface roughness and surface morphology as determined by atomic force microscopy and it is suggested that this can be used for process optimization of GaN film growth.

Original languageEnglish
Pages (from-to)1098-1102
Number of pages5
JournalJournal of Electronic Materials
Volume26
Issue number10
Publication statusPublished - 1997 Oct 1

Fingerprint

Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
surface roughness
Nitridation
Defect density
Surface roughness
Film growth
Buffers
Substrates
Crystals
buffers
Surface morphology
Light emitting diodes
Semiconductor lasers
Atomic force microscopy
defects
Photoluminescence
crystals
flat surfaces
light emitting diodes

Keywords

  • AFM roughness
  • GaN-buffer layer
  • Nitridation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)

Cite this

The effect of substrate surface roughness on GaN growth using MOCVD process. / Kum, Dongwha; Byun, Dong Jin.

In: Journal of Electronic Materials, Vol. 26, No. 10, 01.10.1997, p. 1098-1102.

Research output: Contribution to journalArticle

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