The effect of the concentration and oxidation state of Sn on the structural and electrical properties of indium tin oxide nanowires

Kyung Soo Park, Young Jin Choi, Jin Gu Kang, Yun Mo Sung, Jae Gwan Park

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High quality single-crystalline indium tin oxide (ITO) nanowires with controlled Sn contents of up to 32.5at.% were successfully synthesized via a thermal metal co-evaporation method, based on a vapor-liquid-solid growth mode, at a substrate temperature of as low as 540 °C. The high solubility of Sn in the nanowires was explained with the existence of Sn2 + ions along with Sn4 + ions: the coexistence of Sn2 + and Sn 4 + ions facilitated their high substitutional incorporation into the In2O3 lattice by relaxing structural and electrical disturbances due to the differences in ionic radii and electrical charges between Sn and In3 + ions. It was revealed that, while the lattice parameter of the ITO nanowires had a minimum value at a Sn content of 6.3at.%, the electrical resistivity had a minimum value of about 10 - 3Ωcm at a Sn content of 14at.%. These structural and electrical behaviors were explained by variation in the relative and total amounts of the two species, Sn2 + and Sn4 +.

Original languageEnglish
Article number285712
Issue number28
Publication statusPublished - 2011 Jul 15


ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)

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