The effect of trapped charge on silicon nanowire pseudo-MOSFETs

Incheol Nam, Minsuk Kim, Syed Faraz Najam, Eunhong Lee, Sungwoo Hwang, Sangsig Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The effects of organic molecules grafted on top of silicon nanowires are modeled as the oxide trap charges (Qot) and interface trap charges (Qit). The device investigated here is a pseudo-MOSFET with a thick bottom oxide (200 nm) and only a thin native oxide (5 nm) on top. With Q ot = -5.0 × 1011 cm-2 and the U-shaped distribution of interface trap density (Dit) as a function of trap energy (Et), the structures are reproduced through the conventional technology computer aided design (TCAD) simulation tool, and the channel is imaginarily divided into several sections (5 × 5 regions) to apply the localized traps. The electrical parameters are extracted from the each part to quantitatively compare their effectiveness. The local position of the grafted molecules, modeled by these charges, is shown to result in strong variations in the relative change in the threshold voltage and subthreshold swing. These variations are explained by the surface depletion and scattering near the edges of the etched device and the series resistance effect.

Original languageEnglish
Pages (from-to)6409-6412
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume13
Issue number9
DOIs
Publication statusPublished - 2013 Sep 1

Fingerprint

Nanowires
Silicon
Oxides
nanowires
field effect transistors
traps
silicon
Computer-Aided Design
Equipment and Supplies
Molecules
oxides
Threshold voltage
Computer aided design
Scattering
Technology
computer aided design
threshold voltage
molecules
depletion
scattering

Keywords

  • Interface trap charge
  • Oxide trap charge
  • Pseudo-MOSFET
  • Silicon nanowire

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

Cite this

The effect of trapped charge on silicon nanowire pseudo-MOSFETs. / Nam, Incheol; Kim, Minsuk; Najam, Syed Faraz; Lee, Eunhong; Hwang, Sungwoo; Kim, Sangsig.

In: Journal of Nanoscience and Nanotechnology, Vol. 13, No. 9, 01.09.2013, p. 6409-6412.

Research output: Contribution to journalArticle

Nam, Incheol ; Kim, Minsuk ; Najam, Syed Faraz ; Lee, Eunhong ; Hwang, Sungwoo ; Kim, Sangsig. / The effect of trapped charge on silicon nanowire pseudo-MOSFETs. In: Journal of Nanoscience and Nanotechnology. 2013 ; Vol. 13, No. 9. pp. 6409-6412.
@article{3fd6b673fa324746bbe3af85cc190f6d,
title = "The effect of trapped charge on silicon nanowire pseudo-MOSFETs",
abstract = "The effects of organic molecules grafted on top of silicon nanowires are modeled as the oxide trap charges (Qot) and interface trap charges (Qit). The device investigated here is a pseudo-MOSFET with a thick bottom oxide (200 nm) and only a thin native oxide (5 nm) on top. With Q ot = -5.0 × 1011 cm-2 and the U-shaped distribution of interface trap density (Dit) as a function of trap energy (Et), the structures are reproduced through the conventional technology computer aided design (TCAD) simulation tool, and the channel is imaginarily divided into several sections (5 × 5 regions) to apply the localized traps. The electrical parameters are extracted from the each part to quantitatively compare their effectiveness. The local position of the grafted molecules, modeled by these charges, is shown to result in strong variations in the relative change in the threshold voltage and subthreshold swing. These variations are explained by the surface depletion and scattering near the edges of the etched device and the series resistance effect.",
keywords = "Interface trap charge, Oxide trap charge, Pseudo-MOSFET, Silicon nanowire",
author = "Incheol Nam and Minsuk Kim and Najam, {Syed Faraz} and Eunhong Lee and Sungwoo Hwang and Sangsig Kim",
year = "2013",
month = "9",
day = "1",
doi = "10.1166/jnn.2013.7608",
language = "English",
volume = "13",
pages = "6409--6412",
journal = "Journal of Nanoscience and Nanotechnology",
issn = "1533-4880",
publisher = "American Scientific Publishers",
number = "9",

}

TY - JOUR

T1 - The effect of trapped charge on silicon nanowire pseudo-MOSFETs

AU - Nam, Incheol

AU - Kim, Minsuk

AU - Najam, Syed Faraz

AU - Lee, Eunhong

AU - Hwang, Sungwoo

AU - Kim, Sangsig

PY - 2013/9/1

Y1 - 2013/9/1

N2 - The effects of organic molecules grafted on top of silicon nanowires are modeled as the oxide trap charges (Qot) and interface trap charges (Qit). The device investigated here is a pseudo-MOSFET with a thick bottom oxide (200 nm) and only a thin native oxide (5 nm) on top. With Q ot = -5.0 × 1011 cm-2 and the U-shaped distribution of interface trap density (Dit) as a function of trap energy (Et), the structures are reproduced through the conventional technology computer aided design (TCAD) simulation tool, and the channel is imaginarily divided into several sections (5 × 5 regions) to apply the localized traps. The electrical parameters are extracted from the each part to quantitatively compare their effectiveness. The local position of the grafted molecules, modeled by these charges, is shown to result in strong variations in the relative change in the threshold voltage and subthreshold swing. These variations are explained by the surface depletion and scattering near the edges of the etched device and the series resistance effect.

AB - The effects of organic molecules grafted on top of silicon nanowires are modeled as the oxide trap charges (Qot) and interface trap charges (Qit). The device investigated here is a pseudo-MOSFET with a thick bottom oxide (200 nm) and only a thin native oxide (5 nm) on top. With Q ot = -5.0 × 1011 cm-2 and the U-shaped distribution of interface trap density (Dit) as a function of trap energy (Et), the structures are reproduced through the conventional technology computer aided design (TCAD) simulation tool, and the channel is imaginarily divided into several sections (5 × 5 regions) to apply the localized traps. The electrical parameters are extracted from the each part to quantitatively compare their effectiveness. The local position of the grafted molecules, modeled by these charges, is shown to result in strong variations in the relative change in the threshold voltage and subthreshold swing. These variations are explained by the surface depletion and scattering near the edges of the etched device and the series resistance effect.

KW - Interface trap charge

KW - Oxide trap charge

KW - Pseudo-MOSFET

KW - Silicon nanowire

UR - http://www.scopus.com/inward/record.url?scp=84885457145&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84885457145&partnerID=8YFLogxK

U2 - 10.1166/jnn.2013.7608

DO - 10.1166/jnn.2013.7608

M3 - Article

AN - SCOPUS:84885457145

VL - 13

SP - 6409

EP - 6412

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

SN - 1533-4880

IS - 9

ER -