The effects of ambient He pressure on the oxygen density of Er-doped SiO                         x                          thin films grown by laser ablation of a Si:Er                         2                         O                          3                          target

Seung Min Park; Chang Hyun Bae; Sang Hwan Nam; Young Rae Jang; Keon Ho Yoo; Jeong Sook Ha

doi:10.1016/S0169-4332(03)00674-3

The effects of ambient He pressure on the oxygen density of Er-doped SiO _x thin films grown by laser ablation of a Si:Er ₂ O ₃ target

Seung Min Park, Chang Hyun Bae, Sang Hwan Nam, Young Rae Jang, Keon Ho Yoo, Jeong Sook Ha

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Er-doped SiO _x thin films were fabricated by laser ablation of a Si:Er ₂ O ₃ target in He atmosphere. We have measured the photoluminescence (PL) at 1.54 μm for the films grown at different He pressures and found that the oxygen density of the grown film that strongly influences the PL intensity is highly correlated with the ambient He pressure. This manifests that oxygen density of the film can be controlled in an inert atmosphere to maximize PL intensity when we adopt pulsed laser deposition (PLD) technique to deposit Er-doped SiO _x thin films. Also, we have examined the temperature dependence of PL and observed that the thermal quenching is greatly reduced for the PLD-grown films.

Original language	English
Pages (from-to)	311-317
Number of pages	7
Journal	Applied Surface Science
Volume	218
Issue number	1-4
DOIs	https://doi.org/10.1016/S0169-4332(03)00674-3
Publication status	Published - 2003 Sept 30

Keywords

1.54 μm photoluminescence
Er-doped SiO thin film
Laser ablation

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/S0169-4332(03)00674-3

Cite this

Park, S. M., Bae, C. H., Nam, S. H., Jang, Y. R., Yoo, K. H., & Ha, J. S. (2003). The effects of ambient He pressure on the oxygen density of Er-doped SiO _x thin films grown by laser ablation of a Si:Er ₂ O ₃ target Applied Surface Science, 218(1-4), 311-317. https://doi.org/10.1016/S0169-4332(03)00674-3

The effects of ambient He pressure on the oxygen density of Er-doped SiO _x thin films grown by laser ablation of a Si:Er ₂ O ₃ target . / Park, Seung Min; Bae, Chang Hyun; Nam, Sang Hwan et al.

In: Applied Surface Science, Vol. 218, No. 1-4, 30.09.2003, p. 311-317.

Research output: Contribution to journal › Article › peer-review

Park, SM, Bae, CH, Nam, SH, Jang, YR, Yoo, KH & Ha, JS 2003, ' The effects of ambient He pressure on the oxygen density of Er-doped SiO _x thin films grown by laser ablation of a Si:Er ₂ O ₃ target ', Applied Surface Science, vol. 218, no. 1-4, pp. 311-317. https://doi.org/10.1016/S0169-4332(03)00674-3

Park SM, Bae CH, Nam SH, Jang YR, Yoo KH, Ha JS. The effects of ambient He pressure on the oxygen density of Er-doped SiO _x thin films grown by laser ablation of a Si:Er ₂ O ₃ target Applied Surface Science. 2003 Sept 30;218(1-4):311-317. doi: 10.1016/S0169-4332(03)00674-3

Park, Seung Min ; Bae, Chang Hyun ; Nam, Sang Hwan et al. / The effects of ambient He pressure on the oxygen density of Er-doped SiO _x thin films grown by laser ablation of a Si:Er ₂ O ₃ target In: Applied Surface Science. 2003 ; Vol. 218, No. 1-4. pp. 311-317.

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title = " The effects of ambient He pressure on the oxygen density of Er-doped SiO x thin films grown by laser ablation of a Si:Er 2 O 3 target ",

abstract = " Er-doped SiO x thin films were fabricated by laser ablation of a Si:Er 2 O 3 target in He atmosphere. We have measured the photoluminescence (PL) at 1.54 μm for the films grown at different He pressures and found that the oxygen density of the grown film that strongly influences the PL intensity is highly correlated with the ambient He pressure. This manifests that oxygen density of the film can be controlled in an inert atmosphere to maximize PL intensity when we adopt pulsed laser deposition (PLD) technique to deposit Er-doped SiO x thin films. Also, we have examined the temperature dependence of PL and observed that the thermal quenching is greatly reduced for the PLD-grown films.",

keywords = "1.54 μm photoluminescence, Er-doped SiO thin film, Laser ablation",

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AU - Yoo, Keon Ho

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