The effects of ambient He pressure on the oxygen density of Er-doped SiO x thin films grown by laser ablation of a Si:Er 2 O 3 target

Seung Min Park, Chang Hyun Bae, Sang Hwan Nam, Young Rae Jang, Keon Ho Yoo, Jeong Sook Ha

Research output: Contribution to journalArticle

Abstract

Er-doped SiO x thin films were fabricated by laser ablation of a Si:Er 2 O 3 target in He atmosphere. We have measured the photoluminescence (PL) at 1.54 μm for the films grown at different He pressures and found that the oxygen density of the grown film that strongly influences the PL intensity is highly correlated with the ambient He pressure. This manifests that oxygen density of the film can be controlled in an inert atmosphere to maximize PL intensity when we adopt pulsed laser deposition (PLD) technique to deposit Er-doped SiO x thin films. Also, we have examined the temperature dependence of PL and observed that the thermal quenching is greatly reduced for the PLD-grown films.

Original languageEnglish
Pages (from-to)311-317
Number of pages7
JournalApplied Surface Science
Volume218
Issue number1-4
DOIs
Publication statusPublished - 2003 Sep 30

Keywords

  • 1.54 μm photoluminescence
  • Er-doped SiO thin film
  • Laser ablation

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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