Abstract
We fabricated Er-doped silicon-rich silicon oxide (SRSO : Er) films by pulsed laser deposition. A Si + Er target consisting of an Er metallic strip and a silicon disk was adopted with a goal to achieve a convenient control of the Er and oxygen density in the film. We found that the photoluminescence (PL) at 1.54 μm is highly dependent on the ambient oxygen pressure, which determines the relative ratio of Si-Si, SiOx, and SiO2 phase in the film. The PL intensity increased drastically with increase in the annealing temperature and reached the maximum intensity at 500°C.
| Original language | English |
|---|---|
| Pages (from-to) | 1485-1488 |
| Number of pages | 4 |
| Journal | Applied Physics A: Materials Science and Processing |
| Volume | 79 |
| Issue number | 4-6 |
| Publication status | Published - 2004 Sep 1 |
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ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy (miscellaneous)
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The effects of ambient oxygen pressure on the 1.54 μm photoluminescence of Er-doped silicon-rich silicon oxide films grown by laser ablation of a Si + Er target. / Ha, Jeong Sook; Sung, G. Y.; Lee, S.; Jang, Y. R.; Yoo, K. H.; Bae, C. H.; Jeon, J. S.; Nam, S. H.; Park, S. M.
In: Applied Physics A: Materials Science and Processing, Vol. 79, No. 4-6, 01.09.2004, p. 1485-1488.Research output: Contribution to journal › Article
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TY - JOUR
T1 - The effects of ambient oxygen pressure on the 1.54 μm photoluminescence of Er-doped silicon-rich silicon oxide films grown by laser ablation of a Si + Er target
AU - Ha, Jeong Sook
AU - Sung, G. Y.
AU - Lee, S.
AU - Jang, Y. R.
AU - Yoo, K. H.
AU - Bae, C. H.
AU - Jeon, J. S.
AU - Nam, S. H.
AU - Park, S. M.
PY - 2004/9/1
Y1 - 2004/9/1
N2 - We fabricated Er-doped silicon-rich silicon oxide (SRSO : Er) films by pulsed laser deposition. A Si + Er target consisting of an Er metallic strip and a silicon disk was adopted with a goal to achieve a convenient control of the Er and oxygen density in the film. We found that the photoluminescence (PL) at 1.54 μm is highly dependent on the ambient oxygen pressure, which determines the relative ratio of Si-Si, SiOx, and SiO2 phase in the film. The PL intensity increased drastically with increase in the annealing temperature and reached the maximum intensity at 500°C.
AB - We fabricated Er-doped silicon-rich silicon oxide (SRSO : Er) films by pulsed laser deposition. A Si + Er target consisting of an Er metallic strip and a silicon disk was adopted with a goal to achieve a convenient control of the Er and oxygen density in the film. We found that the photoluminescence (PL) at 1.54 μm is highly dependent on the ambient oxygen pressure, which determines the relative ratio of Si-Si, SiOx, and SiO2 phase in the film. The PL intensity increased drastically with increase in the annealing temperature and reached the maximum intensity at 500°C.
UR - http://www.scopus.com/inward/record.url?scp=4344680539&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=4344680539&partnerID=8YFLogxK
M3 - Article
VL - 79
SP - 1485
EP - 1488
JO - Applied Physics
JF - Applied Physics
SN - 0340-3793
IS - 4-6
ER -