The effects of ambient oxygen pressure on the 1.54 μm photoluminescence of Er-doped silicon-rich silicon oxide films grown by laser ablation of a Si + Er target

J. S. Ha; G. Y. Sung; S. Lee; Y. R. Jang; K. H. Yoo; C. H. Bae; J. S. Jeon; S. H. Nam; S. M. Park

doi:10.1007/s00339-004-2826-4

The effects of ambient oxygen pressure on the 1.54 μm photoluminescence of Er-doped silicon-rich silicon oxide films grown by laser ablation of a Si + Er target

J. S. Ha, G. Y. Sung, S. Lee, Y. R. Jang, K. H. Yoo, C. H. Bae, J. S. Jeon, S. H. Nam, S. M. Park

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We fabricated Er-doped silicon-rich silicon oxide (SRSO : Er) films by pulsed laser deposition. A Si + Er target consisting of an Er metallic strip and a silicon disk was adopted with a goal to achieve a convenient control of the Er and oxygen density in the film. We found that the photoluminescence (PL) at 1.54 μm is highly dependent on the ambient oxygen pressure, which determines the relative ratio of Si-Si, SiO_x, and SiO₂ phase in the film. The PL intensity increased drastically with increase in the annealing temperature and reached the maximum intensity at 500°C.

Original language	English
Pages (from-to)	1485-1488
Number of pages	4
Journal	Applied Physics A: Materials Science and Processing
Volume	79
Issue number	4-6
DOIs	https://doi.org/10.1007/s00339-004-2826-4
Publication status	Published - 2004

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)

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Ha, J. S., Sung, G. Y., Lee, S., Jang, Y. R., Yoo, K. H., Bae, C. H., Jeon, J. S., Nam, S. H., & Park, S. M. (2004). The effects of ambient oxygen pressure on the 1.54 μm photoluminescence of Er-doped silicon-rich silicon oxide films grown by laser ablation of a Si + Er target. Applied Physics A: Materials Science and Processing, 79(4-6), 1485-1488. https://doi.org/10.1007/s00339-004-2826-4

The effects of ambient oxygen pressure on the 1.54 μm photoluminescence of Er-doped silicon-rich silicon oxide films grown by laser ablation of a Si + Er target. / Ha, J. S.; Sung, G. Y.; Lee, S.; Jang, Y. R.; Yoo, K. H.; Bae, C. H.; Jeon, J. S.; Nam, S. H.; Park, S. M.

In: Applied Physics A: Materials Science and Processing, Vol. 79, No. 4-6, 2004, p. 1485-1488.

Research output: Contribution to journal › Article › peer-review

Ha, JS, Sung, GY, Lee, S, Jang, YR, Yoo, KH, Bae, CH, Jeon, JS, Nam, SH & Park, SM 2004, 'The effects of ambient oxygen pressure on the 1.54 μm photoluminescence of Er-doped silicon-rich silicon oxide films grown by laser ablation of a Si + Er target', Applied Physics A: Materials Science and Processing, vol. 79, no. 4-6, pp. 1485-1488. https://doi.org/10.1007/s00339-004-2826-4

Ha, J. S. ; Sung, G. Y. ; Lee, S. ; Jang, Y. R. ; Yoo, K. H. ; Bae, C. H. ; Jeon, J. S. ; Nam, S. H. ; Park, S. M. / The effects of ambient oxygen pressure on the 1.54 μm photoluminescence of Er-doped silicon-rich silicon oxide films grown by laser ablation of a Si + Er target. In: Applied Physics A: Materials Science and Processing. 2004 ; Vol. 79, No. 4-6. pp. 1485-1488.

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abstract = "We fabricated Er-doped silicon-rich silicon oxide (SRSO : Er) films by pulsed laser deposition. A Si + Er target consisting of an Er metallic strip and a silicon disk was adopted with a goal to achieve a convenient control of the Er and oxygen density in the film. We found that the photoluminescence (PL) at 1.54 μm is highly dependent on the ambient oxygen pressure, which determines the relative ratio of Si-Si, SiOx, and SiO2 phase in the film. The PL intensity increased drastically with increase in the annealing temperature and reached the maximum intensity at 500°C.",

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AB - We fabricated Er-doped silicon-rich silicon oxide (SRSO : Er) films by pulsed laser deposition. A Si + Er target consisting of an Er metallic strip and a silicon disk was adopted with a goal to achieve a convenient control of the Er and oxygen density in the film. We found that the photoluminescence (PL) at 1.54 μm is highly dependent on the ambient oxygen pressure, which determines the relative ratio of Si-Si, SiOx, and SiO2 phase in the film. The PL intensity increased drastically with increase in the annealing temperature and reached the maximum intensity at 500°C.

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The effects of ambient oxygen pressure on the 1.54 μm photoluminescence of Er-doped silicon-rich silicon oxide films grown by laser ablation of a Si + Er target

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