The effects of ambient oxygen pressure on the 1.54 μm photoluminescence of Er-doped silicon-rich silicon oxide films grown by laser ablation of a Si + Er target

Jeong Sook Ha, G. Y. Sung, S. Lee, Y. R. Jang, K. H. Yoo, C. H. Bae, J. S. Jeon, S. H. Nam, S. M. Park

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We fabricated Er-doped silicon-rich silicon oxide (SRSO : Er) films by pulsed laser deposition. A Si + Er target consisting of an Er metallic strip and a silicon disk was adopted with a goal to achieve a convenient control of the Er and oxygen density in the film. We found that the photoluminescence (PL) at 1.54 μm is highly dependent on the ambient oxygen pressure, which determines the relative ratio of Si-Si, SiOx, and SiO2 phase in the film. The PL intensity increased drastically with increase in the annealing temperature and reached the maximum intensity at 500°C.

Original languageEnglish
Pages (from-to)1485-1488
Number of pages4
JournalApplied Physics A: Materials Science and Processing
Volume79
Issue number4-6
Publication statusPublished - 2004 Sep 1

Fingerprint

Silicon oxides
Silicon
Laser ablation
silicon oxides
laser ablation
Oxide films
oxide films
Photoluminescence
Oxygen
photoluminescence
silicon
oxygen
Pulsed laser deposition
pulsed laser deposition
strip
Annealing
annealing
Temperature
temperature

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

The effects of ambient oxygen pressure on the 1.54 μm photoluminescence of Er-doped silicon-rich silicon oxide films grown by laser ablation of a Si + Er target. / Ha, Jeong Sook; Sung, G. Y.; Lee, S.; Jang, Y. R.; Yoo, K. H.; Bae, C. H.; Jeon, J. S.; Nam, S. H.; Park, S. M.

In: Applied Physics A: Materials Science and Processing, Vol. 79, No. 4-6, 01.09.2004, p. 1485-1488.

Research output: Contribution to journalArticle

Ha, Jeong Sook ; Sung, G. Y. ; Lee, S. ; Jang, Y. R. ; Yoo, K. H. ; Bae, C. H. ; Jeon, J. S. ; Nam, S. H. ; Park, S. M. / The effects of ambient oxygen pressure on the 1.54 μm photoluminescence of Er-doped silicon-rich silicon oxide films grown by laser ablation of a Si + Er target. In: Applied Physics A: Materials Science and Processing. 2004 ; Vol. 79, No. 4-6. pp. 1485-1488.
@article{017c0b51cfd94e6fb213938123b70a94,
title = "The effects of ambient oxygen pressure on the 1.54 μm photoluminescence of Er-doped silicon-rich silicon oxide films grown by laser ablation of a Si + Er target",
abstract = "We fabricated Er-doped silicon-rich silicon oxide (SRSO : Er) films by pulsed laser deposition. A Si + Er target consisting of an Er metallic strip and a silicon disk was adopted with a goal to achieve a convenient control of the Er and oxygen density in the film. We found that the photoluminescence (PL) at 1.54 μm is highly dependent on the ambient oxygen pressure, which determines the relative ratio of Si-Si, SiOx, and SiO2 phase in the film. The PL intensity increased drastically with increase in the annealing temperature and reached the maximum intensity at 500°C.",
author = "Ha, {Jeong Sook} and Sung, {G. Y.} and S. Lee and Jang, {Y. R.} and Yoo, {K. H.} and Bae, {C. H.} and Jeon, {J. S.} and Nam, {S. H.} and Park, {S. M.}",
year = "2004",
month = "9",
day = "1",
language = "English",
volume = "79",
pages = "1485--1488",
journal = "Applied Physics",
issn = "0340-3793",
publisher = "Springer Heidelberg",
number = "4-6",

}

TY - JOUR

T1 - The effects of ambient oxygen pressure on the 1.54 μm photoluminescence of Er-doped silicon-rich silicon oxide films grown by laser ablation of a Si + Er target

AU - Ha, Jeong Sook

AU - Sung, G. Y.

AU - Lee, S.

AU - Jang, Y. R.

AU - Yoo, K. H.

AU - Bae, C. H.

AU - Jeon, J. S.

AU - Nam, S. H.

AU - Park, S. M.

PY - 2004/9/1

Y1 - 2004/9/1

N2 - We fabricated Er-doped silicon-rich silicon oxide (SRSO : Er) films by pulsed laser deposition. A Si + Er target consisting of an Er metallic strip and a silicon disk was adopted with a goal to achieve a convenient control of the Er and oxygen density in the film. We found that the photoluminescence (PL) at 1.54 μm is highly dependent on the ambient oxygen pressure, which determines the relative ratio of Si-Si, SiOx, and SiO2 phase in the film. The PL intensity increased drastically with increase in the annealing temperature and reached the maximum intensity at 500°C.

AB - We fabricated Er-doped silicon-rich silicon oxide (SRSO : Er) films by pulsed laser deposition. A Si + Er target consisting of an Er metallic strip and a silicon disk was adopted with a goal to achieve a convenient control of the Er and oxygen density in the film. We found that the photoluminescence (PL) at 1.54 μm is highly dependent on the ambient oxygen pressure, which determines the relative ratio of Si-Si, SiOx, and SiO2 phase in the film. The PL intensity increased drastically with increase in the annealing temperature and reached the maximum intensity at 500°C.

UR - http://www.scopus.com/inward/record.url?scp=4344680539&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4344680539&partnerID=8YFLogxK

M3 - Article

VL - 79

SP - 1485

EP - 1488

JO - Applied Physics

JF - Applied Physics

SN - 0340-3793

IS - 4-6

ER -