TY - JOUR
T1 - The effects of film thickness on the electrical, optical, and structural properties of cylindrical, rotating, magnetron-sputtered ITO films
AU - Kim, Jae Ho
AU - Seong, Tae Yeon
AU - Ahn, Kyung Jun
AU - Chung, Kwun Bum
AU - Seok, Hae Jun
AU - Seo, Hyeong Jin
AU - Kim, Han Ki
PY - 2018/5/15
Y1 - 2018/5/15
N2 - We report the characteristics of Sn-doped In2O3 (ITO) films intended for use as transparent conducting electrodes; the films were prepared via a five-generation, in-line type, cylindrical, rotating magnetron sputtering (CRMS) system as a function of film thickness. By using a rotating cylindrical ITO target with high usage (∼80%), we prepared high conductivity, transparent ITO films on five-generation size glass. The effects of film thickness on the electrical, optical, morphological, and structural properties of CRMS-grown ITO films are investigated in detail to correlate the thickness and performance of ITO films. The preferred orientation changed from the (2 2 2) to the (4 0 0) plane with increasing thickness of ITO is attributed to the stability of the (4 0 0) plane against resputtering during the CRMS process. Based on X-ray diffraction, surface field emission scanning electron microscopy, and cross-sectional transmission electron microscopy, we suggest a possible mechanism to explain the preferred orientation and effects of film thickness on the performance of CRMS-grown ITO films.
AB - We report the characteristics of Sn-doped In2O3 (ITO) films intended for use as transparent conducting electrodes; the films were prepared via a five-generation, in-line type, cylindrical, rotating magnetron sputtering (CRMS) system as a function of film thickness. By using a rotating cylindrical ITO target with high usage (∼80%), we prepared high conductivity, transparent ITO films on five-generation size glass. The effects of film thickness on the electrical, optical, morphological, and structural properties of CRMS-grown ITO films are investigated in detail to correlate the thickness and performance of ITO films. The preferred orientation changed from the (2 2 2) to the (4 0 0) plane with increasing thickness of ITO is attributed to the stability of the (4 0 0) plane against resputtering during the CRMS process. Based on X-ray diffraction, surface field emission scanning electron microscopy, and cross-sectional transmission electron microscopy, we suggest a possible mechanism to explain the preferred orientation and effects of film thickness on the performance of CRMS-grown ITO films.
KW - Cylindrical rotating magnetron sputtering
KW - Preferred orientation
KW - Sn-doped InO
KW - Thickness
KW - Transparent conducting electrodes
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U2 - 10.1016/j.apsusc.2018.01.318
DO - 10.1016/j.apsusc.2018.01.318
M3 - Article
AN - SCOPUS:85041410163
VL - 440
SP - 1211
EP - 1218
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
ER -