The effects of H2/N2 mixed gas-plasma pretreatment of sapphire (0001) surface on the characteristics of GaN epilayers

Jaekyun Kim, Young Ju Park, Dongjin Byun, Eun Kyu Kim, Eui Kwan Koh, Il Woo Park

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)


The effects of plasma pretreatment on sapphire and the properties of the GaN overgrown epilayers were investigated. The sapphire surface was pretreated with H2/N2 mixed gas-plasma at 350 °C for 30 min with fixed 50 W plasma power from which an about 2 nm thick oxygen-deficient layer was obtained. GaN epilayer of about 4.5 μm thick were grown using a metal organic chemical vapor deposition (MOCVD) system. X-ray rocking curves and cathodoluminescence spectra of the GaN epilayers showed that the crystallinity was improved through the mixed gas-plasma pretreatment of sapphire substrate. It was found that the oxygen-deficient thin layer plays a major role in reducing crytallographic defects in the GaN epilayers.

Original languageEnglish
Pages (from-to)S446-S449
JournalJournal of the Korean Physical Society
Issue numberSPEC.
Publication statusPublished - 2003 Feb
EventProceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of
Duration: 2002 Aug 202002 Aug 23


  • GaN
  • H/N mixed gas plasma
  • Oxygen-deficient thin layer

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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