Abstract
The effects of plasma pretreatment on sapphire and the properties of the GaN overgrown epilayers were investigated. The sapphire surface was pretreated with H2/N2 mixed gas-plasma at 350 °C for 30 min with fixed 50 W plasma power from which an about 2 nm thick oxygen-deficient layer was obtained. GaN epilayer of about 4.5 μm thick were grown using a metal organic chemical vapor deposition (MOCVD) system. X-ray rocking curves and cathodoluminescence spectra of the GaN epilayers showed that the crystallinity was improved through the mixed gas-plasma pretreatment of sapphire substrate. It was found that the oxygen-deficient thin layer plays a major role in reducing crytallographic defects in the GaN epilayers.
| Original language | English |
|---|---|
| Journal | Journal of the Korean Physical Society |
| Volume | 42 |
| Issue number | SPEC. |
| Publication status | Published - 2003 Feb 1 |
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Keywords
- GaN
- H/N mixed gas plasma
- Oxygen-deficient thin layer
ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
The effects of H2/N2 mixed gas-plasma pretreatment of sapphire (0001) surface on the characteristics of GaN epilayers. / Kim, Jaekyun; Park, Young Ju; Byun, Dong Jin; Kim, Eun Kyu; Koh, Eui Kwan; Park, Il Woo.
In: Journal of the Korean Physical Society, Vol. 42, No. SPEC., 01.02.2003.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - The effects of H2/N2 mixed gas-plasma pretreatment of sapphire (0001) surface on the characteristics of GaN epilayers
AU - Kim, Jaekyun
AU - Park, Young Ju
AU - Byun, Dong Jin
AU - Kim, Eun Kyu
AU - Koh, Eui Kwan
AU - Park, Il Woo
PY - 2003/2/1
Y1 - 2003/2/1
N2 - The effects of plasma pretreatment on sapphire and the properties of the GaN overgrown epilayers were investigated. The sapphire surface was pretreated with H2/N2 mixed gas-plasma at 350 °C for 30 min with fixed 50 W plasma power from which an about 2 nm thick oxygen-deficient layer was obtained. GaN epilayer of about 4.5 μm thick were grown using a metal organic chemical vapor deposition (MOCVD) system. X-ray rocking curves and cathodoluminescence spectra of the GaN epilayers showed that the crystallinity was improved through the mixed gas-plasma pretreatment of sapphire substrate. It was found that the oxygen-deficient thin layer plays a major role in reducing crytallographic defects in the GaN epilayers.
AB - The effects of plasma pretreatment on sapphire and the properties of the GaN overgrown epilayers were investigated. The sapphire surface was pretreated with H2/N2 mixed gas-plasma at 350 °C for 30 min with fixed 50 W plasma power from which an about 2 nm thick oxygen-deficient layer was obtained. GaN epilayer of about 4.5 μm thick were grown using a metal organic chemical vapor deposition (MOCVD) system. X-ray rocking curves and cathodoluminescence spectra of the GaN epilayers showed that the crystallinity was improved through the mixed gas-plasma pretreatment of sapphire substrate. It was found that the oxygen-deficient thin layer plays a major role in reducing crytallographic defects in the GaN epilayers.
KW - GaN
KW - H/N mixed gas plasma
KW - Oxygen-deficient thin layer
UR - http://www.scopus.com/inward/record.url?scp=0037307697&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0037307697&partnerID=8YFLogxK
M3 - Article
VL - 42
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
SN - 0374-4884
IS - SPEC.
ER -