The effects of H2/N2 mixed gas-plasma pretreatment of sapphire (0001) surface on the characteristics of GaN epilayers

Jaekyun Kim, Young Ju Park, Dong Jin Byun, Eun Kyu Kim, Eui Kwan Koh, Il Woo Park

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The effects of plasma pretreatment on sapphire and the properties of the GaN overgrown epilayers were investigated. The sapphire surface was pretreated with H2/N2 mixed gas-plasma at 350 °C for 30 min with fixed 50 W plasma power from which an about 2 nm thick oxygen-deficient layer was obtained. GaN epilayer of about 4.5 μm thick were grown using a metal organic chemical vapor deposition (MOCVD) system. X-ray rocking curves and cathodoluminescence spectra of the GaN epilayers showed that the crystallinity was improved through the mixed gas-plasma pretreatment of sapphire substrate. It was found that the oxygen-deficient thin layer plays a major role in reducing crytallographic defects in the GaN epilayers.

Original languageEnglish
JournalJournal of the Korean Physical Society
Volume42
Issue numberSPEC.
Publication statusPublished - 2003 Feb 1

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pretreatment
sapphire
gases
oxygen
cathodoluminescence
metalorganic chemical vapor deposition
crystallinity
defects
curves
x rays

Keywords

  • GaN
  • H/N mixed gas plasma
  • Oxygen-deficient thin layer

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

The effects of H2/N2 mixed gas-plasma pretreatment of sapphire (0001) surface on the characteristics of GaN epilayers. / Kim, Jaekyun; Park, Young Ju; Byun, Dong Jin; Kim, Eun Kyu; Koh, Eui Kwan; Park, Il Woo.

In: Journal of the Korean Physical Society, Vol. 42, No. SPEC., 01.02.2003.

Research output: Contribution to journalArticle

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AU - Park, Il Woo

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AB - The effects of plasma pretreatment on sapphire and the properties of the GaN overgrown epilayers were investigated. The sapphire surface was pretreated with H2/N2 mixed gas-plasma at 350 °C for 30 min with fixed 50 W plasma power from which an about 2 nm thick oxygen-deficient layer was obtained. GaN epilayer of about 4.5 μm thick were grown using a metal organic chemical vapor deposition (MOCVD) system. X-ray rocking curves and cathodoluminescence spectra of the GaN epilayers showed that the crystallinity was improved through the mixed gas-plasma pretreatment of sapphire substrate. It was found that the oxygen-deficient thin layer plays a major role in reducing crytallographic defects in the GaN epilayers.

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