The effects of H2/N2 mixed gas-plasma pretreatment of sapphire (0001) surface on the characteristics of GaN epilayers

Jaekyun Kim; Young Ju Park; Dongjin Byun; Eun Kyu Kim; Eui Kwan Koh; Il Woo Park

The effects of H₂/N₂ mixed gas-plasma pretreatment of sapphire (0001) surface on the characteristics of GaN epilayers

Jaekyun Kim, Young Ju Park, Dongjin Byun, Eun Kyu Kim, Eui Kwan Koh, Il Woo Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

The effects of plasma pretreatment on sapphire and the properties of the GaN overgrown epilayers were investigated. The sapphire surface was pretreated with H₂/N₂ mixed gas-plasma at 350 °C for 30 min with fixed 50 W plasma power from which an about 2 nm thick oxygen-deficient layer was obtained. GaN epilayer of about 4.5 μm thick were grown using a metal organic chemical vapor deposition (MOCVD) system. X-ray rocking curves and cathodoluminescence spectra of the GaN epilayers showed that the crystallinity was improved through the mixed gas-plasma pretreatment of sapphire substrate. It was found that the oxygen-deficient thin layer plays a major role in reducing crytallographic defects in the GaN epilayers.

Original language	English
Pages (from-to)	S446-S449
Journal	Journal of the Korean Physical Society
Volume	42
Issue number	SPEC.
Publication status	Published - 2003 Feb
Event	Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of Duration: 2002 Aug 20 → 2002 Aug 23

Keywords

GaN
H/N mixed gas plasma
Oxygen-deficient thin layer

ASJC Scopus subject areas

Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'The effects of H<sub>2</sub>/N<sub>2</sub> mixed gas-plasma pretreatment of sapphire (0001) surface on the characteristics of GaN epilayers'. Together they form a unique fingerprint.

Cite this

The effects of H₂/N₂ mixed gas-plasma pretreatment of sapphire (0001) surface on the characteristics of GaN epilayers. / Kim, Jaekyun; Park, Young Ju; Byun, Dongjin; Kim, Eun Kyu; Koh, Eui Kwan; Park, Il Woo.

In: Journal of the Korean Physical Society, Vol. 42, No. SPEC., 02.2003, p. S446-S449.

Research output: Contribution to journal › Conference article › peer-review

@article{cebac1f5444a4628b24438081f29ab3c,

title = "The effects of H2/N2 mixed gas-plasma pretreatment of sapphire (0001) surface on the characteristics of GaN epilayers",

abstract = "The effects of plasma pretreatment on sapphire and the properties of the GaN overgrown epilayers were investigated. The sapphire surface was pretreated with H2/N2 mixed gas-plasma at 350 °C for 30 min with fixed 50 W plasma power from which an about 2 nm thick oxygen-deficient layer was obtained. GaN epilayer of about 4.5 μm thick were grown using a metal organic chemical vapor deposition (MOCVD) system. X-ray rocking curves and cathodoluminescence spectra of the GaN epilayers showed that the crystallinity was improved through the mixed gas-plasma pretreatment of sapphire substrate. It was found that the oxygen-deficient thin layer plays a major role in reducing crytallographic defects in the GaN epilayers.",

keywords = "GaN, H/N mixed gas plasma, Oxygen-deficient thin layer",

author = "Jaekyun Kim and Park, {Young Ju} and Dongjin Byun and Kim, {Eun Kyu} and Koh, {Eui Kwan} and Park, {Il Woo}",

year = "2003",

month = feb,

language = "English",

volume = "42",

pages = "S446--S449",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "SPEC.",

note = "Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 ; Conference date: 20-08-2002 Through 23-08-2002",

}

TY - JOUR

T1 - The effects of H2/N2 mixed gas-plasma pretreatment of sapphire (0001) surface on the characteristics of GaN epilayers

AU - Kim, Jaekyun

AU - Park, Young Ju

AU - Byun, Dongjin

AU - Kim, Eun Kyu

AU - Koh, Eui Kwan

AU - Park, Il Woo

PY - 2003/2

Y1 - 2003/2

N2 - The effects of plasma pretreatment on sapphire and the properties of the GaN overgrown epilayers were investigated. The sapphire surface was pretreated with H2/N2 mixed gas-plasma at 350 °C for 30 min with fixed 50 W plasma power from which an about 2 nm thick oxygen-deficient layer was obtained. GaN epilayer of about 4.5 μm thick were grown using a metal organic chemical vapor deposition (MOCVD) system. X-ray rocking curves and cathodoluminescence spectra of the GaN epilayers showed that the crystallinity was improved through the mixed gas-plasma pretreatment of sapphire substrate. It was found that the oxygen-deficient thin layer plays a major role in reducing crytallographic defects in the GaN epilayers.

AB - The effects of plasma pretreatment on sapphire and the properties of the GaN overgrown epilayers were investigated. The sapphire surface was pretreated with H2/N2 mixed gas-plasma at 350 °C for 30 min with fixed 50 W plasma power from which an about 2 nm thick oxygen-deficient layer was obtained. GaN epilayer of about 4.5 μm thick were grown using a metal organic chemical vapor deposition (MOCVD) system. X-ray rocking curves and cathodoluminescence spectra of the GaN epilayers showed that the crystallinity was improved through the mixed gas-plasma pretreatment of sapphire substrate. It was found that the oxygen-deficient thin layer plays a major role in reducing crytallographic defects in the GaN epilayers.

KW - GaN

KW - H/N mixed gas plasma

KW - Oxygen-deficient thin layer

UR - http://www.scopus.com/inward/record.url?scp=0037307697&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037307697&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0037307697

VL - 42

SP - S446-S449

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - SPEC.

T2 - Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002

Y2 - 20 August 2002 through 23 August 2002