The effects of in flow during growth interruption on the optical properties of InGaN multiple quantum wells grown by low pressure metalorganic chemical vapor deposition

Shi Jong Leem, Min Hong Kim, Johngoen Shin, Yoonho Choi, Jichai Jeong

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11 Citations (Scopus)

Abstract

In0.2Ga0.8N/In0.03Ga0.97N 3-period multiple quantum wells (MQWs) were grown by low pressure metalorganic chemical vapor deposition and the effects of pre-In flow prior to QW growth on its overall optical property were investigated. Pre-In flow did not change the structural property of the MQW structure such as In composition and period but strongly influenced its optical properties. MQW samples grown with pre-In flow exhibited longer peak wavelength and stronger peak intensity. CL measurement revealed more uniform and smaller emission centers in pre-In flow samples, implying a reduction of non-radiative defective regions and more In-rich regions. These results indicate that the In source introduced prior to QW growth preferentially gets incorporated around defect sites such as threading dislocations to inhibit their propagation while forming seeds for In-rich regions.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume40
Issue number4 B
Publication statusPublished - 2001 Apr 15

Fingerprint

Low pressure chemical vapor deposition
interruption
Metallorganic chemical vapor deposition
Semiconductor quantum wells
metalorganic chemical vapor deposition
low pressure
Optical properties
quantum wells
optical properties
Seed
Structural properties
seeds
Wavelength
Defects
Chemical analysis
propagation
defects
wavelengths

Keywords

  • Growth interruption
  • InGaN quantum well
  • MOCVD
  • Pre-In flow

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "In0.2Ga0.8N/In0.03Ga0.97N 3-period multiple quantum wells (MQWs) were grown by low pressure metalorganic chemical vapor deposition and the effects of pre-In flow prior to QW growth on its overall optical property were investigated. Pre-In flow did not change the structural property of the MQW structure such as In composition and period but strongly influenced its optical properties. MQW samples grown with pre-In flow exhibited longer peak wavelength and stronger peak intensity. CL measurement revealed more uniform and smaller emission centers in pre-In flow samples, implying a reduction of non-radiative defective regions and more In-rich regions. These results indicate that the In source introduced prior to QW growth preferentially gets incorporated around defect sites such as threading dislocations to inhibit their propagation while forming seeds for In-rich regions.",
keywords = "Growth interruption, InGaN quantum well, MOCVD, Pre-In flow",
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T1 - The effects of in flow during growth interruption on the optical properties of InGaN multiple quantum wells grown by low pressure metalorganic chemical vapor deposition

AU - Leem, Shi Jong

AU - Kim, Min Hong

AU - Shin, Johngoen

AU - Choi, Yoonho

AU - Jeong, Jichai

PY - 2001/4/15

Y1 - 2001/4/15

N2 - In0.2Ga0.8N/In0.03Ga0.97N 3-period multiple quantum wells (MQWs) were grown by low pressure metalorganic chemical vapor deposition and the effects of pre-In flow prior to QW growth on its overall optical property were investigated. Pre-In flow did not change the structural property of the MQW structure such as In composition and period but strongly influenced its optical properties. MQW samples grown with pre-In flow exhibited longer peak wavelength and stronger peak intensity. CL measurement revealed more uniform and smaller emission centers in pre-In flow samples, implying a reduction of non-radiative defective regions and more In-rich regions. These results indicate that the In source introduced prior to QW growth preferentially gets incorporated around defect sites such as threading dislocations to inhibit their propagation while forming seeds for In-rich regions.

AB - In0.2Ga0.8N/In0.03Ga0.97N 3-period multiple quantum wells (MQWs) were grown by low pressure metalorganic chemical vapor deposition and the effects of pre-In flow prior to QW growth on its overall optical property were investigated. Pre-In flow did not change the structural property of the MQW structure such as In composition and period but strongly influenced its optical properties. MQW samples grown with pre-In flow exhibited longer peak wavelength and stronger peak intensity. CL measurement revealed more uniform and smaller emission centers in pre-In flow samples, implying a reduction of non-radiative defective regions and more In-rich regions. These results indicate that the In source introduced prior to QW growth preferentially gets incorporated around defect sites such as threading dislocations to inhibit their propagation while forming seeds for In-rich regions.

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KW - MOCVD

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