Abstract
In this study, the effects of Mn-doping and the electrode materials on the memory characteristics of ZnOxS1-x resistive random access memory (ReRAM) devices on plastic are investigated. Compared with the undoped Al/ZnOxS1-x/Au and Al/ ZnOxS1-x /Cu devices, the Mn-doped ones show a relatively higher ratio of the high resistance state (HRS) to low resistance state (LRS), and narrower resistance distributions in both states. For the ZnOxS1-x devices with bottom electrodes of Cu, more stable conducting filament paths are formed near these electrodes, due to the relatively higher affinity of copper to sulfur, compared with the devices with bottom electrodes of Au, so that the distributions of the set and reset voltages get narrower. For the Al/ ZnOxS1-x /Cu device, the ratio of the HRS to LRS is above 106, and the memory characteristics are maintained for 104 sec, which values are comparable to those of ReRAM devices on Si or glass substrates
| Original language | English |
|---|---|
| Pages (from-to) | 24-27 |
| Number of pages | 4 |
| Journal | Transactions on Electrical and Electronic Materials |
| Volume | 15 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2014 Feb 1 |
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Keywords
- Doping effect
- Resistive switching
- Unipolar
- ZnOS
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
The effects of Mn-doping and electrode material on the resistive switching characteristics of ZnOxS1-x thin films on plastic. / Han, Yong; Cho, Kyoungah; Park, Sukhyung; Kim, Sangsig.
In: Transactions on Electrical and Electronic Materials, Vol. 15, No. 1, 01.02.2014, p. 24-27.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - The effects of Mn-doping and electrode material on the resistive switching characteristics of ZnOxS1-x thin films on plastic
AU - Han, Yong
AU - Cho, Kyoungah
AU - Park, Sukhyung
AU - Kim, Sangsig
PY - 2014/2/1
Y1 - 2014/2/1
N2 - In this study, the effects of Mn-doping and the electrode materials on the memory characteristics of ZnOxS1-x resistive random access memory (ReRAM) devices on plastic are investigated. Compared with the undoped Al/ZnOxS1-x/Au and Al/ ZnOxS1-x /Cu devices, the Mn-doped ones show a relatively higher ratio of the high resistance state (HRS) to low resistance state (LRS), and narrower resistance distributions in both states. For the ZnOxS1-x devices with bottom electrodes of Cu, more stable conducting filament paths are formed near these electrodes, due to the relatively higher affinity of copper to sulfur, compared with the devices with bottom electrodes of Au, so that the distributions of the set and reset voltages get narrower. For the Al/ ZnOxS1-x /Cu device, the ratio of the HRS to LRS is above 106, and the memory characteristics are maintained for 104 sec, which values are comparable to those of ReRAM devices on Si or glass substrates
AB - In this study, the effects of Mn-doping and the electrode materials on the memory characteristics of ZnOxS1-x resistive random access memory (ReRAM) devices on plastic are investigated. Compared with the undoped Al/ZnOxS1-x/Au and Al/ ZnOxS1-x /Cu devices, the Mn-doped ones show a relatively higher ratio of the high resistance state (HRS) to low resistance state (LRS), and narrower resistance distributions in both states. For the ZnOxS1-x devices with bottom electrodes of Cu, more stable conducting filament paths are formed near these electrodes, due to the relatively higher affinity of copper to sulfur, compared with the devices with bottom electrodes of Au, so that the distributions of the set and reset voltages get narrower. For the Al/ ZnOxS1-x /Cu device, the ratio of the HRS to LRS is above 106, and the memory characteristics are maintained for 104 sec, which values are comparable to those of ReRAM devices on Si or glass substrates
KW - Doping effect
KW - Resistive switching
KW - Unipolar
KW - ZnOS
UR - http://www.scopus.com/inward/record.url?scp=84894099613&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84894099613&partnerID=8YFLogxK
U2 - 10.4313/TEEM.2014.15.1.24
DO - 10.4313/TEEM.2014.15.1.24
M3 - Article
AN - SCOPUS:84894099613
VL - 15
SP - 24
EP - 27
JO - Transactions on Electrical and Electronic Materials
JF - Transactions on Electrical and Electronic Materials
SN - 1229-7607
IS - 1
ER -