The effects of Mn-doping and electrode material on the resistive switching characteristics of ZnO_xS_1-x thin films on plastic

In this study, the effects of Mn-doping and the electrode materials on the memory characteristics of ZnO_xS_1-x resistive random access memory (ReRAM) devices on plastic are investigated. Compared with the undoped Al/ZnO_xS_1-x/Au and Al/ ZnO_xS_1-x /Cu devices, the Mn-doped ones show a relatively higher ratio of the high resistance state (HRS) to low resistance state (LRS), and narrower resistance distributions in both states. For the ZnO_xS_1-x devices with bottom electrodes of Cu, more stable conducting filament paths are formed near these electrodes, due to the relatively higher affinity of copper to sulfur, compared with the devices with bottom electrodes of Au, so that the distributions of the set and reset voltages get narrower. For the Al/ ZnO_xS_1-x /Cu device, the ratio of the HRS to LRS is above 10⁶, and the memory characteristics are maintained for 10⁴ sec, which values are comparable to those of ReRAM devices on Si or glass substrates