The effects of proton irradiation on the reliability of InAlN/GaN high electron mobility transistors

L. Liu, C. F. Lo, Y. Y. Xi, Y. X. Wang, H. Y. Kim, J. Kim, S. J. Pearton, O. Laboutin, Y. Cao, J. W. Johnson, I. I. Kravchenko, F. Ren

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We have investigated the effect of proton irradiation on reliability of InAlN/GaN high electron mobility transistors (HEMTs). Devices were subjected to 5-15 MeV proton irradiations with a fixed dose of 5 × 1015 cm-2, or to a different doses of 2 × 1011, 5 × 1013 or 2 × 1015 cm-2 of protons at a fixed energy of 5 MeV. During off-state electrical stressing, the typical critical voltage for un-irradiated devices was 45 to 55 V. By sharp contrast, no critical voltage was detected for proton irradiated HEMTs up to 100 V, which was instrument-limited. After electrical stressing, no degradation was observed for the drain or gate current-voltage characteristics of the proton-irradiated HEMTs. However, the drain current decreased ∼12%, and the reverse bias gate leakage current increased more than two orders of magnitude for unirradiated HEMTs as a result of electrical stressing.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices VIII
DOIs
Publication statusPublished - 2013
EventSPIE Symposium on Gallium Nitride Materials and Devices VIII - San Francisco, CA, United States
Duration: 2013 Feb 42013 Feb 7

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8625
ISSN (Print)0277-786X

Other

OtherSPIE Symposium on Gallium Nitride Materials and Devices VIII
CountryUnited States
CitySan Francisco, CA
Period13/2/413/2/7

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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    Liu, L., Lo, C. F., Xi, Y. Y., Wang, Y. X., Kim, H. Y., Kim, J., Pearton, S. J., Laboutin, O., Cao, Y., Johnson, J. W., Kravchenko, I. I., & Ren, F. (2013). The effects of proton irradiation on the reliability of InAlN/GaN high electron mobility transistors. In Gallium Nitride Materials and Devices VIII [86250W] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8625). https://doi.org/10.1117/12.2007287