The effects of proton irradiation on the reliability of InAlN/GaN high electron mobility transistors

L. Liu, C. F. Lo, Y. Y. Xi, Y. X. Wang, H. Y. Kim, Ji Hyun Kim, S. J. Pearton, O. Laboutin, Y. Cao, J. W. Johnson, I. I. Kravchenko, F. Ren

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We have investigated the effect of proton irradiation on reliability of InAlN/GaN high electron mobility transistors (HEMTs). Devices were subjected to 5-15 MeV proton irradiations with a fixed dose of 5 × 1015 cm-2, or to a different doses of 2 × 1011, 5 × 1013 or 2 × 1015 cm-2 of protons at a fixed energy of 5 MeV. During off-state electrical stressing, the typical critical voltage for un-irradiated devices was 45 to 55 V. By sharp contrast, no critical voltage was detected for proton irradiated HEMTs up to 100 V, which was instrument-limited. After electrical stressing, no degradation was observed for the drain or gate current-voltage characteristics of the proton-irradiated HEMTs. However, the drain current decreased ∼12%, and the reverse bias gate leakage current increased more than two orders of magnitude for unirradiated HEMTs as a result of electrical stressing.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume8625
DOIs
Publication statusPublished - 2013 Jun 12
EventSPIE Symposium on Gallium Nitride Materials and Devices VIII - San Francisco, CA, United States
Duration: 2013 Feb 42013 Feb 7

Other

OtherSPIE Symposium on Gallium Nitride Materials and Devices VIII
CountryUnited States
CitySan Francisco, CA
Period13/2/413/2/7

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ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Liu, L., Lo, C. F., Xi, Y. Y., Wang, Y. X., Kim, H. Y., Kim, J. H., Pearton, S. J., Laboutin, O., Cao, Y., Johnson, J. W., Kravchenko, I. I., & Ren, F. (2013). The effects of proton irradiation on the reliability of InAlN/GaN high electron mobility transistors. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 8625). [86250W] https://doi.org/10.1117/12.2007287