The effects of proton irradiation on the reliability of InAlN/GaN high electron mobility transistors

L. Liu, C. F. Lo, Y. Y. Xi, Y. X. Wang, H. Y. Kim, J. Kim, S. J. Pearton, O. Laboutin, Y. Cao, J. W. Johnson, I. I. Kravchenko, F. Ren

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