The efficacy of metal-interfacial layer-semiconductor source/drain structure on sub-10-nm n-type ge FinFET performances

Jeong Kyu Kim; Gwang Sik Kim; Hyohyun Nam; Changhwan Shin; Jin Hong Park; Jong Kook Kim; Byung Jin Cho; Krishna C. Saraswat; Hyun Yong Yu

doi:10.1109/LED.2014.2364574

The efficacy of metal-interfacial layer-semiconductor source/drain structure on sub-10-nm n-type ge FinFET performances

Jeong Kyu Kim, Gwang Sik Kim, Hyohyun Nam, Changhwan Shin, Jin Hong Park, Jong Kook Kim, Byung Jin Cho, Krishna C. Saraswat, Hyun Yong Yu

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

We investigate the impact of metal-interfacial layer-semiconductor source/drain (M-I-S S/D) structure with heavily doped n-type interfacial layer (n⁺-IL) or with undoped IL on sub-10-nm n-type germanium (Ge) FinFET device performance using 3-D TCAD simulations. Compared to the metal-semiconductor S/D structure, the M-I-S S/D structures provide much lower contact resistivity. Especially, the M-I-S S/D structure with n⁺-IL provides much lower contact resistivity, resulting in ~5 × lower contact resistivity than 1 × 10^-8 Ω-cm², specified in International Technology Roadmap for Semiconductors. In addition, we found that the M-I-S structure with n⁺-IL remarkably suppresses the sensitivity of contact resistivity to S/D doping concentration.

Original language	English
Article number	6936878
Pages (from-to)	1185-1187
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	35
Issue number	12
DOIs	https://doi.org/10.1109/LED.2014.2364574
Publication status	Published - 2014 Dec 1

Keywords

CMOS
FinFET
MOSFET
contact resistance
germanium
interfacial layer
source/drain

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2014.2364574

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@article{c3f057fe604b4de9a8dcde0ee5415826,

title = "The efficacy of metal-interfacial layer-semiconductor source/drain structure on sub-10-nm n-type ge FinFET performances",

abstract = "We investigate the impact of metal-interfacial layer-semiconductor source/drain (M-I-S S/D) structure with heavily doped n-type interfacial layer (n+-IL) or with undoped IL on sub-10-nm n-type germanium (Ge) FinFET device performance using 3-D TCAD simulations. Compared to the metal-semiconductor S/D structure, the M-I-S S/D structures provide much lower contact resistivity. Especially, the M-I-S S/D structure with n+-IL provides much lower contact resistivity, resulting in ~5 × lower contact resistivity than 1 × 10-8 Ω-cm2, specified in International Technology Roadmap for Semiconductors. In addition, we found that the M-I-S structure with n+-IL remarkably suppresses the sensitivity of contact resistivity to S/D doping concentration.",

keywords = "CMOS, FinFET, MOSFET, contact resistance, germanium, interfacial layer, source/drain",

author = "Kim, {Jeong Kyu} and Kim, {Gwang Sik} and Hyohyun Nam and Changhwan Shin and Park, {Jin Hong} and Kim, {Jong Kook} and Cho, {Byung Jin} and Saraswat, {Krishna C.} and Yu, {Hyun Yong}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.",

year = "2014",

month = dec,

day = "1",

doi = "10.1109/LED.2014.2364574",

language = "English",

volume = "35",

pages = "1185--1187",

journal = "IEEE Electron Device Letters",

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T1 - The efficacy of metal-interfacial layer-semiconductor source/drain structure on sub-10-nm n-type ge FinFET performances

AU - Kim, Jeong Kyu

AU - Kim, Gwang Sik

AU - Nam, Hyohyun

AU - Shin, Changhwan

AU - Park, Jin Hong

AU - Kim, Jong Kook

AU - Cho, Byung Jin

AU - Saraswat, Krishna C.

AU - Yu, Hyun Yong

PY - 2014/12/1

Y1 - 2014/12/1

N2 - We investigate the impact of metal-interfacial layer-semiconductor source/drain (M-I-S S/D) structure with heavily doped n-type interfacial layer (n+-IL) or with undoped IL on sub-10-nm n-type germanium (Ge) FinFET device performance using 3-D TCAD simulations. Compared to the metal-semiconductor S/D structure, the M-I-S S/D structures provide much lower contact resistivity. Especially, the M-I-S S/D structure with n+-IL provides much lower contact resistivity, resulting in ~5 × lower contact resistivity than 1 × 10-8 Ω-cm2, specified in International Technology Roadmap for Semiconductors. In addition, we found that the M-I-S structure with n+-IL remarkably suppresses the sensitivity of contact resistivity to S/D doping concentration.

AB - We investigate the impact of metal-interfacial layer-semiconductor source/drain (M-I-S S/D) structure with heavily doped n-type interfacial layer (n+-IL) or with undoped IL on sub-10-nm n-type germanium (Ge) FinFET device performance using 3-D TCAD simulations. Compared to the metal-semiconductor S/D structure, the M-I-S S/D structures provide much lower contact resistivity. Especially, the M-I-S S/D structure with n+-IL provides much lower contact resistivity, resulting in ~5 × lower contact resistivity than 1 × 10-8 Ω-cm2, specified in International Technology Roadmap for Semiconductors. In addition, we found that the M-I-S structure with n+-IL remarkably suppresses the sensitivity of contact resistivity to S/D doping concentration.

KW - CMOS

KW - FinFET

KW - MOSFET

KW - contact resistance

KW - germanium

KW - interfacial layer

KW - source/drain

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U2 - 10.1109/LED.2014.2364574

DO - 10.1109/LED.2014.2364574

M3 - Article

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SN - 0741-3106

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SP - 1185

EP - 1187

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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M1 - 6936878

ER -

The efficacy of metal-interfacial layer-semiconductor source/drain structure on sub-10-nm n-type ge FinFET performances

Abstract

Keywords

ASJC Scopus subject areas

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