The efficacy of metal-interfacial layer-semiconductor source/drain structure on sub-10-nm n-type ge FinFET performances

Jeong Kyu Kim, Gwang Sik Kim, Hyohyun Nam, Changhwan Shin, Jin Hong Park, Jong Kook Kim, Byung Jin Cho, Krishna C. Saraswat, Hyun Yong Yu

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

We investigate the impact of metal-interfacial layer-semiconductor source/drain (M-I-S S/D) structure with heavily doped n-type interfacial layer (n+-IL) or with undoped IL on sub-10-nm n-type germanium (Ge) FinFET device performance using 3-D TCAD simulations. Compared to the metal-semiconductor S/D structure, the M-I-S S/D structures provide much lower contact resistivity. Especially, the M-I-S S/D structure with n+-IL provides much lower contact resistivity, resulting in ~5 × lower contact resistivity than 1 × 10-8 Ω-cm2, specified in International Technology Roadmap for Semiconductors. In addition, we found that the M-I-S structure with n+-IL remarkably suppresses the sensitivity of contact resistivity to S/D doping concentration.

Original languageEnglish
Article number6936878
Pages (from-to)1185-1187
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number12
DOIs
Publication statusPublished - 2014 Dec 1

Keywords

  • CMOS
  • FinFET
  • MOSFET
  • contact resistance
  • germanium
  • interfacial layer
  • source/drain

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'The efficacy of metal-interfacial layer-semiconductor source/drain structure on sub-10-nm n-type ge FinFET performances'. Together they form a unique fingerprint.

Cite this