The efficacy of metal-interfacial layer-semiconductor source/drain structure on sub-10-nm n-type ge FinFET performances

Jeong Kyu Kim, Gwang Sik Kim, Hyohyun Nam, Changhwan Shin, Jin Hong Park, Jong-Kook Kim, Byung Jin Cho, Krishna C. Saraswat, Hyun-Yong Yu

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)

Abstract

We investigate the impact of metal-interfacial layer-semiconductor source/drain (M-I-S S/D) structure with heavily doped n-type interfacial layer (n+-IL) or with undoped IL on sub-10-nm n-type germanium (Ge) FinFET device performance using 3-D TCAD simulations. Compared to the metal-semiconductor S/D structure, the M-I-S S/D structures provide much lower contact resistivity. Especially, the M-I-S S/D structure with n+-IL provides much lower contact resistivity, resulting in ~5 × lower contact resistivity than 1 × 10-8 Ω-cm2, specified in International Technology Roadmap for Semiconductors. In addition, we found that the M-I-S structure with n+-IL remarkably suppresses the sensitivity of contact resistivity to S/D doping concentration.

Original languageEnglish
Article number6936878
Pages (from-to)1185-1187
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number12
DOIs
Publication statusPublished - 2014 Dec 1

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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