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The efficacy of metal-interfacial layer-semiconductor source/drain structure on sub-10-nm n-type ge FinFET performances
Jeong Kyu Kim, Gwang Sik Kim, Hyohyun Nam, Changhwan Shin, Jin Hong Park, Jong Kook Kim, Byung Jin Cho, Krishna C. Saraswat, Hyun Yong Yu
Research output: Contribution to journal › Article › peer-review
21
Citations
(Scopus)