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The efficacy of metal-interfacial layer-semiconductor source/drain structure on sub-10-nm n-type ge FinFET performances
Jeong Kyu Kim, Gwang Sik Kim, Hyohyun Nam, Changhwan Shin, Jin Hong Park, Jong-Kook Kim, Byung Jin Cho, Krishna C. Saraswat, Hyun-Yong Yu
Research output: Contribution to journal › Article › peer-review
21
Citations
(Scopus)