The efficacy of metal-interfacial layer-semiconductor source/drain structure on sub-10-nm n-type ge FinFET performances

Jeong Kyu Kim, Gwang Sik Kim, Hyohyun Nam, Changhwan Shin, Jin Hong Park, Jong Kook Kim, Byung Jin Cho, Krishna C. Saraswat, Hyun Yong Yu

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Fingerprint

Dive into the research topics of 'The efficacy of metal-interfacial layer-semiconductor source/drain structure on sub-10-nm n-type ge FinFET performances'. Together they form a unique fingerprint.

Engineering & Materials Science

Chemical Compounds