The efficacy of metal-interfacial layer-semiconductor source/drain structure on sub-10-nm n-type ge FinFET performances

Jeong Kyu Kim, Gwang Sik Kim, Hyohyun Nam, Changhwan Shin, Jin Hong Park, Jong-Kook Kim, Byung Jin Cho, Krishna C. Saraswat, Hyun-Yong Yu

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

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Chemical Compounds

Engineering & Materials Science