The authors report on the electrical and photoconductivity characteristics of donor-acceptor alternating copolymer, poly(dioctyloxinapthalenediketopyrrolopyrrole) (PONDPP) with Al/PONDPP/p-Si/Al hybrid organic/inorganic Schottky diode for optoelectronic applications. The fabricated device shows ideality factor value of 2.6 and barrier height of 0.68eV obtained from current-voltage characteristics. The high rectification ratio of 1.86×104 and photo-responsivity of 55mA/W at 650nm is achieved. From results, we found that the fine photo-response and electrical characteristics are attributed to the modified band-gap structure to have Schottky barrier at highest occupied molecular orbital to valence band of silicon and high hole mobility of PONDPP.
|Journal||Applied Physics Letters|
|Publication status||Published - 2012 Dec 10|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)