Abstract
The authors report on the electrical and photoconductivity characteristics of donor-acceptor alternating copolymer, poly(dioctyloxinapthalenediketopyrrolopyrrole) (PONDPP) with Al/PONDPP/p-Si/Al hybrid organic/inorganic Schottky diode for optoelectronic applications. The fabricated device shows ideality factor value of 2.6 and barrier height of 0.68eV obtained from current-voltage characteristics. The high rectification ratio of 1.86×104 and photo-responsivity of 55mA/W at 650nm is achieved. From results, we found that the fine photo-response and electrical characteristics are attributed to the modified band-gap structure to have Schottky barrier at highest occupied molecular orbital to valence band of silicon and high hole mobility of PONDPP.
| Original language | English |
|---|---|
| Article number | 243301 |
| Journal | Applied Physics Letters |
| Volume | 101 |
| Issue number | 24 |
| DOIs | |
| Publication status | Published - 2012 Dec 10 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
The electrical and photoconductivity characteristics of donor-acceptor alternating copolymer using solution process. / Woo Jeong, Shin; Back Lee, Gi; Ha, Hyeon Jun; Kwon, Soon Ki; Kim, Yun Hi; Ju, Byeong Kwon.
In: Applied Physics Letters, Vol. 101, No. 24, 243301, 10.12.2012.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - The electrical and photoconductivity characteristics of donor-acceptor alternating copolymer using solution process
AU - Woo Jeong, Shin
AU - Back Lee, Gi
AU - Ha, Hyeon Jun
AU - Kwon, Soon Ki
AU - Kim, Yun Hi
AU - Ju, Byeong Kwon
PY - 2012/12/10
Y1 - 2012/12/10
N2 - The authors report on the electrical and photoconductivity characteristics of donor-acceptor alternating copolymer, poly(dioctyloxinapthalenediketopyrrolopyrrole) (PONDPP) with Al/PONDPP/p-Si/Al hybrid organic/inorganic Schottky diode for optoelectronic applications. The fabricated device shows ideality factor value of 2.6 and barrier height of 0.68eV obtained from current-voltage characteristics. The high rectification ratio of 1.86×104 and photo-responsivity of 55mA/W at 650nm is achieved. From results, we found that the fine photo-response and electrical characteristics are attributed to the modified band-gap structure to have Schottky barrier at highest occupied molecular orbital to valence band of silicon and high hole mobility of PONDPP.
AB - The authors report on the electrical and photoconductivity characteristics of donor-acceptor alternating copolymer, poly(dioctyloxinapthalenediketopyrrolopyrrole) (PONDPP) with Al/PONDPP/p-Si/Al hybrid organic/inorganic Schottky diode for optoelectronic applications. The fabricated device shows ideality factor value of 2.6 and barrier height of 0.68eV obtained from current-voltage characteristics. The high rectification ratio of 1.86×104 and photo-responsivity of 55mA/W at 650nm is achieved. From results, we found that the fine photo-response and electrical characteristics are attributed to the modified band-gap structure to have Schottky barrier at highest occupied molecular orbital to valence band of silicon and high hole mobility of PONDPP.
UR - http://www.scopus.com/inward/record.url?scp=84871321401&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84871321401&partnerID=8YFLogxK
U2 - 10.1063/1.4770074
DO - 10.1063/1.4770074
M3 - Article
AN - SCOPUS:84871321401
VL - 101
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 24
M1 - 243301
ER -