The electrical and photoconductivity characteristics of donor-acceptor alternating copolymer using solution process

Shin Woo Jeong; Gi Back Lee; Hyeon Jun Ha; Soon Ki Kwon; Yun Hi Kim; Byeong Kwon Ju

doi:10.1063/1.4770074

The electrical and photoconductivity characteristics of donor-acceptor alternating copolymer using solution process

Shin Woo Jeong, Gi Back Lee, Hyeon Jun Ha, Soon Ki Kwon, Yun Hi Kim, Byeong Kwon Ju

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The authors report on the electrical and photoconductivity characteristics of donor-acceptor alternating copolymer, poly(dioctyloxinapthalenediketopyrrolopyrrole) (PONDPP) with Al/PONDPP/p-Si/Al hybrid organic/inorganic Schottky diode for optoelectronic applications. The fabricated device shows ideality factor value of 2.6 and barrier height of 0.68eV obtained from current-voltage characteristics. The high rectification ratio of 1.86×10⁴ and photo-responsivity of 55mA/W at 650nm is achieved. From results, we found that the fine photo-response and electrical characteristics are attributed to the modified band-gap structure to have Schottky barrier at highest occupied molecular orbital to valence band of silicon and high hole mobility of PONDPP.

Original language	English
Article number	243301
Journal	Applied Physics Letters
Volume	101
Issue number	24
DOIs	https://doi.org/10.1063/1.4770074
Publication status	Published - 2012 Dec 10

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4770074

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title = "The electrical and photoconductivity characteristics of donor-acceptor alternating copolymer using solution process",

abstract = "The authors report on the electrical and photoconductivity characteristics of donor-acceptor alternating copolymer, poly(dioctyloxinapthalenediketopyrrolopyrrole) (PONDPP) with Al/PONDPP/p-Si/Al hybrid organic/inorganic Schottky diode for optoelectronic applications. The fabricated device shows ideality factor value of 2.6 and barrier height of 0.68eV obtained from current-voltage characteristics. The high rectification ratio of 1.86×104 and photo-responsivity of 55mA/W at 650nm is achieved. From results, we found that the fine photo-response and electrical characteristics are attributed to the modified band-gap structure to have Schottky barrier at highest occupied molecular orbital to valence band of silicon and high hole mobility of PONDPP.",

author = "{Woo Jeong}, Shin and {Back Lee}, Gi and Ha, {Hyeon Jun} and Kwon, {Soon Ki} and Kim, {Yun Hi} and {Kwon Ju}, Byeong",

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AU - Woo Jeong, Shin

AU - Back Lee, Gi

AU - Ha, Hyeon Jun

AU - Kwon, Soon Ki

AU - Kim, Yun Hi

AU - Kwon Ju, Byeong

PY - 2012/12/10

Y1 - 2012/12/10

N2 - The authors report on the electrical and photoconductivity characteristics of donor-acceptor alternating copolymer, poly(dioctyloxinapthalenediketopyrrolopyrrole) (PONDPP) with Al/PONDPP/p-Si/Al hybrid organic/inorganic Schottky diode for optoelectronic applications. The fabricated device shows ideality factor value of 2.6 and barrier height of 0.68eV obtained from current-voltage characteristics. The high rectification ratio of 1.86×104 and photo-responsivity of 55mA/W at 650nm is achieved. From results, we found that the fine photo-response and electrical characteristics are attributed to the modified band-gap structure to have Schottky barrier at highest occupied molecular orbital to valence band of silicon and high hole mobility of PONDPP.

AB - The authors report on the electrical and photoconductivity characteristics of donor-acceptor alternating copolymer, poly(dioctyloxinapthalenediketopyrrolopyrrole) (PONDPP) with Al/PONDPP/p-Si/Al hybrid organic/inorganic Schottky diode for optoelectronic applications. The fabricated device shows ideality factor value of 2.6 and barrier height of 0.68eV obtained from current-voltage characteristics. The high rectification ratio of 1.86×104 and photo-responsivity of 55mA/W at 650nm is achieved. From results, we found that the fine photo-response and electrical characteristics are attributed to the modified band-gap structure to have Schottky barrier at highest occupied molecular orbital to valence band of silicon and high hole mobility of PONDPP.

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