The electrical characteristics of high density arrays of silicon nanowire field-effect transistors: Dependence on wire spacing

Hye Young Kim, Kangho Lee, Jae Woo Lee, Sangwook Kim, Gyu Tae Kim, Georg S. Duesberg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Since the introduction of silicon nanowire field-effect transistors (SiNW FETs) as a new technology for highly integrated circuits, their scaling behavior has been of crucial importance for the continuation of Moore's law. To date most studies have been of a theoretical nature, as small wire spacing is difficult to achieve experimentally. Here we successfully fabricated and investigated arrays of sub 20 nm SiNW FETs with wire spacing as small as 30 nm for the first time. The channels are contacted using global buried Si electrodes. Using the wafer as the back gate an investigation of the electrical performance of an array of SiNW FETs was undertaken. These experimental observations are supported by simulations using FlexPED.

Original languageEnglish
Title of host publication2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
Pages384-388
Number of pages5
DOIs
Publication statusPublished - 2013
Event2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 - Beijing, China
Duration: 2013 Aug 52013 Aug 8

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Other

Other2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
CountryChina
CityBeijing
Period13/8/513/8/8

ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'The electrical characteristics of high density arrays of silicon nanowire field-effect transistors: Dependence on wire spacing'. Together they form a unique fingerprint.

  • Cite this

    Kim, H. Y., Lee, K., Lee, J. W., Kim, S., Kim, G. T., & Duesberg, G. S. (2013). The electrical characteristics of high density arrays of silicon nanowire field-effect transistors: Dependence on wire spacing. In 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 (pp. 384-388). [6720834] (Proceedings of the IEEE Conference on Nanotechnology). https://doi.org/10.1109/NANO.2013.6720834