The emergence and prospects of deep-ultraviolet light-emitting diode technologies

Michael Kneissl, Tae Yeon Seong, Jung Han, Hiroshi Amano

Research output: Contribution to journalReview articlepeer-review

577 Citations (Scopus)


By alloying GaN with AlN the emission of AlGaN light-emitting diodes can be tuned to cover almost the entire ultraviolet spectral range (210–400 nm), making ultraviolet light-emitting diodes perfectly suited to applications across a wide number of fields, whether biological, environmental, industrial or medical. However, technical developments notwithstanding, deep-ultraviolet light-emitting diodes still exhibit relatively low external quantum efficiencies because of properties intrinsic to aluminium-rich group III nitride materials. Here, we review recent progress in the development of AlGaN-based deep-ultraviolet light-emitting devices. We also describe the key obstacles to enhancing their efficiency and how to improve their performance in terms of defect density, carrier-injection efficiency, light extraction efficiency and heat dissipation.

Original languageEnglish
Pages (from-to)233-244
Number of pages12
JournalNature Photonics
Issue number4
Publication statusPublished - 2019 Apr 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics


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