TY - JOUR
T1 - The emergence and prospects of deep-ultraviolet light-emitting diode technologies
AU - Kneissl, Michael
AU - Seong, Tae Yeon
AU - Han, Jung
AU - Amano, Hiroshi
N1 - Funding Information:
T.-Y.S and H.A. gratefully acknowledge financial support from the National Research Foundation of Korea funded by the Ministry of Science and ICT (Global Research Laboratory programme: NRF-2017K1A1A2013160). M.K. gratefully acknowledges support by the German Research Foundation (DFG) within the Collaborative Research Centre ‘Semiconductor Nanophotonics’ (CRC 787) as well as funding by the Federal Ministry of Education and Research (BMBF) of Germany within the ‘Zwanzig20’ initiative ‘Advanced UV for Life’.
Publisher Copyright:
© 2019, Springer Nature Limited.
PY - 2019/4/1
Y1 - 2019/4/1
N2 - By alloying GaN with AlN the emission of AlGaN light-emitting diodes can be tuned to cover almost the entire ultraviolet spectral range (210–400 nm), making ultraviolet light-emitting diodes perfectly suited to applications across a wide number of fields, whether biological, environmental, industrial or medical. However, technical developments notwithstanding, deep-ultraviolet light-emitting diodes still exhibit relatively low external quantum efficiencies because of properties intrinsic to aluminium-rich group III nitride materials. Here, we review recent progress in the development of AlGaN-based deep-ultraviolet light-emitting devices. We also describe the key obstacles to enhancing their efficiency and how to improve their performance in terms of defect density, carrier-injection efficiency, light extraction efficiency and heat dissipation.
AB - By alloying GaN with AlN the emission of AlGaN light-emitting diodes can be tuned to cover almost the entire ultraviolet spectral range (210–400 nm), making ultraviolet light-emitting diodes perfectly suited to applications across a wide number of fields, whether biological, environmental, industrial or medical. However, technical developments notwithstanding, deep-ultraviolet light-emitting diodes still exhibit relatively low external quantum efficiencies because of properties intrinsic to aluminium-rich group III nitride materials. Here, we review recent progress in the development of AlGaN-based deep-ultraviolet light-emitting devices. We also describe the key obstacles to enhancing their efficiency and how to improve their performance in terms of defect density, carrier-injection efficiency, light extraction efficiency and heat dissipation.
UR - http://www.scopus.com/inward/record.url?scp=85063326272&partnerID=8YFLogxK
U2 - 10.1038/s41566-019-0359-9
DO - 10.1038/s41566-019-0359-9
M3 - Review article
AN - SCOPUS:85063326272
SN - 1749-4885
VL - 13
SP - 233
EP - 244
JO - Nature Photonics
JF - Nature Photonics
IS - 4
ER -