The Fabrication and Experimental Results of a New Lateral Trench Electrode IGBT with a p+ Diverter

Man Young Sung, Ey Goo Kang

Research output: Contribution to journalArticle

Abstract

A new Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) with a p+ diverter was proposed and fabricated to improve the electrical characteristics of the conventional LTIGBT. The p+ diverter was placed between anode and cathode electrodes. Because the p+ diverter region of the proposed device was enclosed trench oxide layer, the electric field centered trench-oxide layer, and punch through breakdown of LTEIGBT with p+ diverter was occurred at the high breakdown voltage. Therefore, the p+ diverter of the proposed LTIGBT didn't relate to breakdown voltage in a different way the conventional LTIGBT. As a results of device simulation, the electrical characteristics of the proposed LTEIGBT including latching current density, breakdown voltage and switching speed was superior to conventional devices. After simulation was finished, we fabricated and analyzed the proposed LTEIGBT with a p+ diverter. The maximum current of the proposed device and conventional device were 90 mA and 70 mA, respectively. Therefore, The proposed LTEIGBT with a p+ diverter is effective device for smart power IC.

Original languageEnglish
Pages (from-to)21-28
Number of pages8
JournalJournal of Computational Electronics
Volume2
Issue number1
DOIs
Publication statusPublished - 2003 Jul 1

Fingerprint

Insulated gate bipolar transistors (IGBT)
Electrode
bipolar transistors
Lateral
Fabrication
Electrodes
fabrication
Breakdown
electrodes
Experimental Results
Electric breakdown
electrical faults
Voltage
Oxides
Device Simulation
punches
oxides
Electric Field
Anodes
Cathodes

Keywords

  • high breakdown voltage
  • Latch-up
  • lateral trench electrode
  • p+ diverter
  • smart power IC

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modelling and Simulation
  • Electrical and Electronic Engineering

Cite this

The Fabrication and Experimental Results of a New Lateral Trench Electrode IGBT with a p+ Diverter. / Sung, Man Young; Kang, Ey Goo.

In: Journal of Computational Electronics, Vol. 2, No. 1, 01.07.2003, p. 21-28.

Research output: Contribution to journalArticle

@article{6a8660060da84b94acb276ed68aaba7c,
title = "The Fabrication and Experimental Results of a New Lateral Trench Electrode IGBT with a p+ Diverter",
abstract = "A new Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) with a p+ diverter was proposed and fabricated to improve the electrical characteristics of the conventional LTIGBT. The p+ diverter was placed between anode and cathode electrodes. Because the p+ diverter region of the proposed device was enclosed trench oxide layer, the electric field centered trench-oxide layer, and punch through breakdown of LTEIGBT with p+ diverter was occurred at the high breakdown voltage. Therefore, the p+ diverter of the proposed LTIGBT didn't relate to breakdown voltage in a different way the conventional LTIGBT. As a results of device simulation, the electrical characteristics of the proposed LTEIGBT including latching current density, breakdown voltage and switching speed was superior to conventional devices. After simulation was finished, we fabricated and analyzed the proposed LTEIGBT with a p+ diverter. The maximum current of the proposed device and conventional device were 90 mA and 70 mA, respectively. Therefore, The proposed LTEIGBT with a p+ diverter is effective device for smart power IC.",
keywords = "high breakdown voltage, Latch-up, lateral trench electrode, p+ diverter, smart power IC",
author = "Sung, {Man Young} and Kang, {Ey Goo}",
year = "2003",
month = "7",
day = "1",
doi = "10.1023/A:1026260708209",
language = "English",
volume = "2",
pages = "21--28",
journal = "Journal of Computational Electronics",
issn = "1569-8025",
publisher = "Springer Netherlands",
number = "1",

}

TY - JOUR

T1 - The Fabrication and Experimental Results of a New Lateral Trench Electrode IGBT with a p+ Diverter

AU - Sung, Man Young

AU - Kang, Ey Goo

PY - 2003/7/1

Y1 - 2003/7/1

N2 - A new Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) with a p+ diverter was proposed and fabricated to improve the electrical characteristics of the conventional LTIGBT. The p+ diverter was placed between anode and cathode electrodes. Because the p+ diverter region of the proposed device was enclosed trench oxide layer, the electric field centered trench-oxide layer, and punch through breakdown of LTEIGBT with p+ diverter was occurred at the high breakdown voltage. Therefore, the p+ diverter of the proposed LTIGBT didn't relate to breakdown voltage in a different way the conventional LTIGBT. As a results of device simulation, the electrical characteristics of the proposed LTEIGBT including latching current density, breakdown voltage and switching speed was superior to conventional devices. After simulation was finished, we fabricated and analyzed the proposed LTEIGBT with a p+ diverter. The maximum current of the proposed device and conventional device were 90 mA and 70 mA, respectively. Therefore, The proposed LTEIGBT with a p+ diverter is effective device for smart power IC.

AB - A new Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) with a p+ diverter was proposed and fabricated to improve the electrical characteristics of the conventional LTIGBT. The p+ diverter was placed between anode and cathode electrodes. Because the p+ diverter region of the proposed device was enclosed trench oxide layer, the electric field centered trench-oxide layer, and punch through breakdown of LTEIGBT with p+ diverter was occurred at the high breakdown voltage. Therefore, the p+ diverter of the proposed LTIGBT didn't relate to breakdown voltage in a different way the conventional LTIGBT. As a results of device simulation, the electrical characteristics of the proposed LTEIGBT including latching current density, breakdown voltage and switching speed was superior to conventional devices. After simulation was finished, we fabricated and analyzed the proposed LTEIGBT with a p+ diverter. The maximum current of the proposed device and conventional device were 90 mA and 70 mA, respectively. Therefore, The proposed LTEIGBT with a p+ diverter is effective device for smart power IC.

KW - high breakdown voltage

KW - Latch-up

KW - lateral trench electrode

KW - p+ diverter

KW - smart power IC

UR - http://www.scopus.com/inward/record.url?scp=85071131389&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85071131389&partnerID=8YFLogxK

U2 - 10.1023/A:1026260708209

DO - 10.1023/A:1026260708209

M3 - Article

AN - SCOPUS:85071131389

VL - 2

SP - 21

EP - 28

JO - Journal of Computational Electronics

JF - Journal of Computational Electronics

SN - 1569-8025

IS - 1

ER -