The Fabrication and Experimental Results of a New Lateral Trench Electrode IGBT with a p+ Diverter

Man Young Sung, Ey Goo Kang

Research output: Contribution to journalArticle

Abstract

A new Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) with a p+ diverter was proposed and fabricated to improve the electrical characteristics of the conventional LTIGBT. The p+ diverter was placed between anode and cathode electrodes. Because the p+ diverter region of the proposed device was enclosed trench oxide layer, the electric field centered trench-oxide layer, and punch through breakdown of LTEIGBT with p+ diverter was occurred at the high breakdown voltage. Therefore, the p+ diverter of the proposed LTIGBT didn't relate to breakdown voltage in a different way the conventional LTIGBT. As a results of device simulation, the electrical characteristics of the proposed LTEIGBT including latching current density, breakdown voltage and switching speed was superior to conventional devices. After simulation was finished, we fabricated and analyzed the proposed LTEIGBT with a p+ diverter. The maximum current of the proposed device and conventional device were 90 mA and 70 mA, respectively. Therefore, The proposed LTEIGBT with a p+ diverter is effective device for smart power IC.

Original languageEnglish
Pages (from-to)21-28
Number of pages8
JournalJournal of Computational Electronics
Volume2
Issue number1
DOIs
Publication statusPublished - 2003 Jul 1

Keywords

  • high breakdown voltage
  • Latch-up
  • lateral trench electrode
  • p+ diverter
  • smart power IC

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modelling and Simulation
  • Electrical and Electronic Engineering

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