The fabrication of a patterned ZnO nanorod array for high brightness LEDs

Hyoungwon Park, Kyeong Jae Byeon, Ki Yeon Yang, Joong Yeon Cho, Heon Lee

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

In this study, a patterned ZnO nanorod array was formed on the ITO layer of GaN-based light-emitting diodes (LEDs), to increase the light extraction efficiency of the LED. The bi-layer imprinted resin pattern was used for selective growth of the ZnO nanorod array on the ITO layer. Compared to conventional LEDs grown on patterned sapphire substrate (PSS), the deposition of the blanket ZnO layer on the ITO layer increased the light extraction efficiency of the LED by about 10%. Further growth of the ZnO nanorod layer on the blanket ZnO layer increased the light extraction efficiency of the LED by about 23%. In the case that a patterned ZnO nanorod layer was formed on a blanket ZnO layer, the light extraction efficiency increased by about 34%. These enhancements of the device were caused by modulation of the refractive-index in ZnO layers and the surface roughening effects because of the unique design of the pattern, which was nanostructure-in-nanopattern, resulting in the formation of many escape cones on the LED surface.

Original languageEnglish
Article number355304
JournalNanotechnology
Volume21
Issue number35
DOIs
Publication statusPublished - 2010 Mar 9

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Nanotubes
Nanorods
Light emitting diodes
Luminance
Light
Fabrication
Aluminum Oxide
Sapphire
Cones
Nanostructures
Refractive index
Resins
Refractometry
Modulation
Growth
Substrates

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)

Cite this

The fabrication of a patterned ZnO nanorod array for high brightness LEDs. / Park, Hyoungwon; Byeon, Kyeong Jae; Yang, Ki Yeon; Cho, Joong Yeon; Lee, Heon.

In: Nanotechnology, Vol. 21, No. 35, 355304, 09.03.2010.

Research output: Contribution to journalArticle

Park, Hyoungwon ; Byeon, Kyeong Jae ; Yang, Ki Yeon ; Cho, Joong Yeon ; Lee, Heon. / The fabrication of a patterned ZnO nanorod array for high brightness LEDs. In: Nanotechnology. 2010 ; Vol. 21, No. 35.
@article{d3cc871fd5024ac5be91f062578e6d4b,
title = "The fabrication of a patterned ZnO nanorod array for high brightness LEDs",
abstract = "In this study, a patterned ZnO nanorod array was formed on the ITO layer of GaN-based light-emitting diodes (LEDs), to increase the light extraction efficiency of the LED. The bi-layer imprinted resin pattern was used for selective growth of the ZnO nanorod array on the ITO layer. Compared to conventional LEDs grown on patterned sapphire substrate (PSS), the deposition of the blanket ZnO layer on the ITO layer increased the light extraction efficiency of the LED by about 10{\%}. Further growth of the ZnO nanorod layer on the blanket ZnO layer increased the light extraction efficiency of the LED by about 23{\%}. In the case that a patterned ZnO nanorod layer was formed on a blanket ZnO layer, the light extraction efficiency increased by about 34{\%}. These enhancements of the device were caused by modulation of the refractive-index in ZnO layers and the surface roughening effects because of the unique design of the pattern, which was nanostructure-in-nanopattern, resulting in the formation of many escape cones on the LED surface.",
author = "Hyoungwon Park and Byeon, {Kyeong Jae} and Yang, {Ki Yeon} and Cho, {Joong Yeon} and Heon Lee",
year = "2010",
month = "3",
day = "9",
doi = "10.1088/0957-4484/21/35/355304",
language = "English",
volume = "21",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "35",

}

TY - JOUR

T1 - The fabrication of a patterned ZnO nanorod array for high brightness LEDs

AU - Park, Hyoungwon

AU - Byeon, Kyeong Jae

AU - Yang, Ki Yeon

AU - Cho, Joong Yeon

AU - Lee, Heon

PY - 2010/3/9

Y1 - 2010/3/9

N2 - In this study, a patterned ZnO nanorod array was formed on the ITO layer of GaN-based light-emitting diodes (LEDs), to increase the light extraction efficiency of the LED. The bi-layer imprinted resin pattern was used for selective growth of the ZnO nanorod array on the ITO layer. Compared to conventional LEDs grown on patterned sapphire substrate (PSS), the deposition of the blanket ZnO layer on the ITO layer increased the light extraction efficiency of the LED by about 10%. Further growth of the ZnO nanorod layer on the blanket ZnO layer increased the light extraction efficiency of the LED by about 23%. In the case that a patterned ZnO nanorod layer was formed on a blanket ZnO layer, the light extraction efficiency increased by about 34%. These enhancements of the device were caused by modulation of the refractive-index in ZnO layers and the surface roughening effects because of the unique design of the pattern, which was nanostructure-in-nanopattern, resulting in the formation of many escape cones on the LED surface.

AB - In this study, a patterned ZnO nanorod array was formed on the ITO layer of GaN-based light-emitting diodes (LEDs), to increase the light extraction efficiency of the LED. The bi-layer imprinted resin pattern was used for selective growth of the ZnO nanorod array on the ITO layer. Compared to conventional LEDs grown on patterned sapphire substrate (PSS), the deposition of the blanket ZnO layer on the ITO layer increased the light extraction efficiency of the LED by about 10%. Further growth of the ZnO nanorod layer on the blanket ZnO layer increased the light extraction efficiency of the LED by about 23%. In the case that a patterned ZnO nanorod layer was formed on a blanket ZnO layer, the light extraction efficiency increased by about 34%. These enhancements of the device were caused by modulation of the refractive-index in ZnO layers and the surface roughening effects because of the unique design of the pattern, which was nanostructure-in-nanopattern, resulting in the formation of many escape cones on the LED surface.

UR - http://www.scopus.com/inward/record.url?scp=77957835836&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77957835836&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/21/35/355304

DO - 10.1088/0957-4484/21/35/355304

M3 - Article

C2 - 20689168

AN - SCOPUS:77957835836

VL - 21

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 35

M1 - 355304

ER -