We fabricated a free-standing structure of a GaN nanowire by selectively etching Si 3N 4, previously grown on a SiO 2 substrate, for application to three-dimensional integrated circuits such as nanorelays and actuators. In the nanowire-deposition process we adopted electrophoresis and reactive ion etching techniques to achieve a well-aligned and free-standing nanowire. The electrical transport measurements were performed from room temperature down to liquid-nitrogen temperature. The current-voltage (I-V) characteristics showed a rectifying behavior in the whole temperature range. We analyze this property as a Schottky barrier formation between the nanowire and electrodes.
|Number of pages||3|
|Journal||Applied Physics A: Materials Science and Processing|
|Publication status||Published - 2005 Jul 1|
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy (miscellaneous)