The fabrication technique and electrical properties of a free-standing GaN nanowire

H. Y. Yu, B. H. Kang, C. W. Park, U. H. Pi, Cheol Jin Lee, S. Y. Choi

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We fabricated a free-standing structure of a GaN nanowire by selectively etching Si 3N 4, previously grown on a SiO 2 substrate, for application to three-dimensional integrated circuits such as nanorelays and actuators. In the nanowire-deposition process we adopted electrophoresis and reactive ion etching techniques to achieve a well-aligned and free-standing nanowire. The electrical transport measurements were performed from room temperature down to liquid-nitrogen temperature. The current-voltage (I-V) characteristics showed a rectifying behavior in the whole temperature range. We analyze this property as a Schottky barrier formation between the nanowire and electrodes.

Original languageEnglish
Pages (from-to)245-247
Number of pages3
JournalApplied Physics A: Materials Science and Processing
Volume81
Issue number2
DOIs
Publication statusPublished - 2005 Jul 1
Externally publishedYes

Fingerprint

Nanowires
Electric properties
nanowires
electrical properties
Fabrication
fabrication
etching
Reactive ion etching
Liquid nitrogen
electrophoresis
Electrophoresis
liquid nitrogen
Temperature
integrated circuits
Etching
Actuators
actuators
Electrodes
temperature
electrodes

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

The fabrication technique and electrical properties of a free-standing GaN nanowire. / Yu, H. Y.; Kang, B. H.; Park, C. W.; Pi, U. H.; Lee, Cheol Jin; Choi, S. Y.

In: Applied Physics A: Materials Science and Processing, Vol. 81, No. 2, 01.07.2005, p. 245-247.

Research output: Contribution to journalArticle

Yu, H. Y. ; Kang, B. H. ; Park, C. W. ; Pi, U. H. ; Lee, Cheol Jin ; Choi, S. Y. / The fabrication technique and electrical properties of a free-standing GaN nanowire. In: Applied Physics A: Materials Science and Processing. 2005 ; Vol. 81, No. 2. pp. 245-247.
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