The impact of oxygen incorporation during intrinsic ZnO sputtering on the performance of Cu(In,Ga)Se2 thin film solar cells

Kkotnim Lee, Eun A. Ok, Jong Keuk Park, Won Mok Kim, Young Joon Baik, Donghwan Kim, Jeung Hyun Jeong

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We investigated the impact of incorporating 2% oxygen during intrinsic ZnO sputtering on the efficiency of Cu(In,Ga)Se2 solar cells. The added oxygen not only reduced the optical absorption loss of the Al-doped ZnO overlaying layer but also improved the electronic properties of the underlying CdS/Cu(In,Ga)Se2 by increasing carrier density, lowering defect level, and increasing diffusion length, eventually enhancing JSC, VOC, and fill factor. It was found that the Na doping concentration was significantly increased around the CdS/Cu(In,Ga)Se2 junction due to the plasma-activated oxygen. The improved electronic properties are better explained by the increased Na concentration than simply the oxygen-related defect passivation.

Original languageEnglish
Article number083906
JournalApplied Physics Letters
Volume105
Issue number8
DOIs
Publication statusPublished - 2014 Aug 25

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solar cells
sputtering
oxygen
thin films
volatile organic compounds
defects
diffusion length
electronics
passivity
optical absorption

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

The impact of oxygen incorporation during intrinsic ZnO sputtering on the performance of Cu(In,Ga)Se2 thin film solar cells. / Lee, Kkotnim; Ok, Eun A.; Park, Jong Keuk; Kim, Won Mok; Baik, Young Joon; Kim, Donghwan; Jeong, Jeung Hyun.

In: Applied Physics Letters, Vol. 105, No. 8, 083906, 25.08.2014.

Research output: Contribution to journalArticle

Lee, Kkotnim ; Ok, Eun A. ; Park, Jong Keuk ; Kim, Won Mok ; Baik, Young Joon ; Kim, Donghwan ; Jeong, Jeung Hyun. / The impact of oxygen incorporation during intrinsic ZnO sputtering on the performance of Cu(In,Ga)Se2 thin film solar cells. In: Applied Physics Letters. 2014 ; Vol. 105, No. 8.
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