The improved performance of a transparent ZnO thin-film transistor with AlN/Al2O3 double gate dielectrics

Jung Min Lee, Byung Hyun Choi, Mi Jung Ji, Jung ho Park, Jae Hong Kwon, Byeong Kwon Ju

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

This paper reports on the fabrication of stable and improved performance of transparent ZnO thin-film transistors (TFTs) with AlN/Al2O 3 double gate dielectrics. AlN films reduce the surface roughness of the channel/dielectric interface due to an excellent lattice match with the ZnO film. Al2O3 films, which have a large band offset between the channel layers, are helpful to reduce the gate leakage current. Good device characteristics have been obtained from the AlN/Al2O3 TFT with a field effect mobility of 4.3 cm2 V-1 s -1, an on-off current ratio of 2 × 105 and a sub-threshold slope of 0.45 V/decade. By diminishing the charge trap density in the interface, the threshold voltage change from the hysteresis of the transfer characteristics was minimized to 0.3 V. These results should increase the prospects of using transparent TFTs for flat panel display applications.

Original languageEnglish
Article number055008
JournalSemiconductor Science and Technology
Volume24
Issue number5
DOIs
Publication statusPublished - 2009 Aug 21

Fingerprint

Gate dielectrics
Thin film transistors
transistors
thin films
Flat panel displays
flat panel displays
Threshold voltage
Leakage currents
threshold voltage
Hysteresis
surface roughness
leakage
Surface roughness
hysteresis
traps
slopes
Fabrication
fabrication
thresholds

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

The improved performance of a transparent ZnO thin-film transistor with AlN/Al2O3 double gate dielectrics. / Lee, Jung Min; Choi, Byung Hyun; Ji, Mi Jung; Park, Jung ho; Kwon, Jae Hong; Ju, Byeong Kwon.

In: Semiconductor Science and Technology, Vol. 24, No. 5, 055008, 21.08.2009.

Research output: Contribution to journalArticle

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