The influence of aluminum composition of AlxGa1-xAs in distributed Bragg reflector on surface morphology

B. Kim, M. Yoon, S. Kim, J. Son, B. Kim, J. Jhin, Dong Jin Byun

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Surface morphology of the AlGaAs/GaAs Vertical Cavity Surface Emitting Laser (VCSEL) grown by metalorganic vapor phase epitaxy (MOVPE) was investigated using atomic force microscopy. It is shown that the morphology of the structure strongly depends on the aluminum composition of the low Al content layer of distributed Bragg reflector (DBR) pairs and epi thickness. Whereas a high Al content layer in DBRs had little effect on the surface morphology, it was attributed that the influence of Al composition on the morphology of Al xGa1-xAs on GaAs was stronger in the range of 0 < x < 0.5 than 0.5 < x < 1.

Original languageEnglish
Pages (from-to)2726-2729
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume241
Issue number12
DOIs
Publication statusPublished - 2004 Oct 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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