The influence of the working pressure on the synthesis of GaN nanowires by using MOCVD

Yong Ho Ra, R. Navamathavan, Young Min Lee, Dong Wook Kim, Jin Soo Kim, In-Hwan Lee, Cheul Ro Lee

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Gallium nitride (GaN) nanowire (NW) arrays were grown on a gold-coated Si(1 1 1) substrate by metal-organic chemical vapor deposition (MOCVD). We grew GaN NWs at various working pressures in order to examine its effect on the growth of NWs. The synthesized GaN NWs were characterized by field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), energy dispersive X-ray (EDX) spectroscopy, photoluminescence (PL), cathodoluminescence (CL), high-resolution transmission electron microscopy (HR-TEM) and Raman spectroscopy. The GaN NWs were highly single crystalline and possess uniform smooth surfaces. The HR-TEM images and selected area electron diffraction (SAED) patterns demonstrated that the GaN NWs were single-crystal wurtzite structure. The surfaces of the GaN NWs were clean, atomically sharp and without any other phases. The PL spectra revealed sharp peaks at 366 nm with a full width at half maximum (FWHM) of 88 meV, clearly indicating that the grown GaN NWs were highly crystalline. The strong E2 (high) phonon line appeared at 567 cm-1 in the Raman spectrum reflects that the characteristics of wurtzite structure of GaN NWs.

Original languageEnglish
Pages (from-to)770-774
Number of pages5
JournalJournal of Crystal Growth
Volume312
Issue number6
DOIs
Publication statusPublished - 2010 Mar 1
Externally publishedYes

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Organic Chemicals
Gallium nitride
gallium nitrides
Organic chemicals
Nanowires
metalorganic chemical vapor deposition
Chemical vapor deposition
nanowires
Metals
synthesis
High resolution transmission electron microscopy
wurtzite
Photoluminescence
Crystalline materials
photoluminescence
transmission electron microscopy
Cathodoluminescence
gallium nitride
high resolution
Full width at half maximum

Keywords

  • A1. FE-SEM
  • A1. Working pressure
  • A3. MOCVD
  • B1. Au catalyst
  • B1. GaN nanowires

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

The influence of the working pressure on the synthesis of GaN nanowires by using MOCVD. / Ra, Yong Ho; Navamathavan, R.; Lee, Young Min; Kim, Dong Wook; Kim, Jin Soo; Lee, In-Hwan; Lee, Cheul Ro.

In: Journal of Crystal Growth, Vol. 312, No. 6, 01.03.2010, p. 770-774.

Research output: Contribution to journalArticle

Ra, Yong Ho ; Navamathavan, R. ; Lee, Young Min ; Kim, Dong Wook ; Kim, Jin Soo ; Lee, In-Hwan ; Lee, Cheul Ro. / The influence of the working pressure on the synthesis of GaN nanowires by using MOCVD. In: Journal of Crystal Growth. 2010 ; Vol. 312, No. 6. pp. 770-774.
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