The influence of the working pressure on the synthesis of GaN nanowires by using MOCVD

Engineering & Materials Science

• Organic chemicals 100%
• Gallium nitride 89%
• Nanowires 80%
• Chemical vapor deposition 75%
• Metals 41%
• High resolution transmission electron microscopy 26%
• Photoluminescence 26%
• Crystalline materials 16%
• Cathodoluminescence 15%
• Phonons 12%
• Full width at half maximum 11%
• Raman scattering 11%
• Diffraction patterns 11%
• Raman spectroscopy 10%
• Electron diffraction 10%
• X-Ray Emission Spectrometry 10%
• Crystal structure 10%
• Field emission 10%
• Single crystals 9%
• Gold 8%
• X ray diffraction 7%
• Scanning electron microscopy 6%
• Substrates 5%

Physics & Astronomy

• gallium nitrides 75%
• metalorganic chemical vapor deposition 61%
• nanowires 52%
• synthesis 46%
• wurtzite 16%
• photoluminescence 11%
• transmission electron microscopy 10%
• high resolution 9%
• cathodoluminescence 8%
• field emission 7%
• x rays 7%
• Raman spectroscopy 6%
• electron diffraction 6%
• diffraction patterns 6%
• gold 6%
• Raman spectra 6%
• phonons 5%
• scanning electron microscopy 5%
• single crystals 5%

Chemical Compounds

• Nitride 62%
• Nanowire 56%
• Pressure 37%
• Cathodoluminescence 10%
• Selected Area Electron Diffraction 9%
• Phonon 9%
• Photoluminescence Spectrum 8%
• Energy Dispersive X-Ray Spectroscopy 7%
• Raman Spectrum 6%
• Photoluminescence 6%
• Raman Spectroscopy 6%
• Single Crystalline Solid 5%
• Surface 5%