The island-gate varactor - A high-Q MOS varactor for millimeter-wave applications

Yongho Oh, Sooyeon Kim, Seungyong Lee, Jae-Sung Rieh

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

A new accumulation MOS varactor with island-shaped poly gate layout is proposed to improve the quality factor (Q-factor) at high frequency, which can be readily employed for CMOS-based millimeter-wave applications. Measured results up to 67 GHz show significant improvements in the Q-factor and the series resistance Rs over the conventional multi-finger MOS varactors with the same ground rule and gate area. The proposed island-gate MOS varactor is expected to improve the overall Q-factor of the LC tank of millimeter-wave oscillators.

Original languageEnglish
Article number4804622
Pages (from-to)215-217
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume19
Issue number4
DOIs
Publication statusPublished - 2009 Apr 1

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varactor diodes
Varactors
Millimeter waves
millimeter waves
Q factors
layouts
CMOS
oscillators

Keywords

  • Millimeter-wave
  • Q-factor
  • Varactors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

The island-gate varactor - A high-Q MOS varactor for millimeter-wave applications. / Oh, Yongho; Kim, Sooyeon; Lee, Seungyong; Rieh, Jae-Sung.

In: IEEE Microwave and Wireless Components Letters, Vol. 19, No. 4, 4804622, 01.04.2009, p. 215-217.

Research output: Contribution to journalArticle

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