The island-gate varactor - A high-Q MOS varactor for millimeter-wave applications

Yongho Oh; Sooyeon Kim; Seungyong Lee; Jae Sung Rieh

doi:10.1109/LMWC.2009.2015499

The island-gate varactor - A high-Q MOS varactor for millimeter-wave applications

Yongho Oh, Sooyeon Kim, Seungyong Lee, Jae Sung Rieh

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

A new accumulation MOS varactor with island-shaped poly gate layout is proposed to improve the quality factor (Q-factor) at high frequency, which can be readily employed for CMOS-based millimeter-wave applications. Measured results up to 67 GHz show significant improvements in the Q-factor and the series resistance R_s over the conventional multi-finger MOS varactors with the same ground rule and gate area. The proposed island-gate MOS varactor is expected to improve the overall Q-factor of the LC tank of millimeter-wave oscillators.

Original language	English
Article number	4804622
Pages (from-to)	215-217
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	19
Issue number	4
DOIs	https://doi.org/10.1109/LMWC.2009.2015499
Publication status	Published - 2009 Apr

Keywords

Millimeter-wave
Q-factor
Varactors

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/LMWC.2009.2015499

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abstract = "A new accumulation MOS varactor with island-shaped poly gate layout is proposed to improve the quality factor (Q-factor) at high frequency, which can be readily employed for CMOS-based millimeter-wave applications. Measured results up to 67 GHz show significant improvements in the Q-factor and the series resistance Rs over the conventional multi-finger MOS varactors with the same ground rule and gate area. The proposed island-gate MOS varactor is expected to improve the overall Q-factor of the LC tank of millimeter-wave oscillators.",

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AB - A new accumulation MOS varactor with island-shaped poly gate layout is proposed to improve the quality factor (Q-factor) at high frequency, which can be readily employed for CMOS-based millimeter-wave applications. Measured results up to 67 GHz show significant improvements in the Q-factor and the series resistance Rs over the conventional multi-finger MOS varactors with the same ground rule and gate area. The proposed island-gate MOS varactor is expected to improve the overall Q-factor of the LC tank of millimeter-wave oscillators.

KW - Millimeter-wave

KW - Q-factor

KW - Varactors

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The island-gate varactor - A high-Q MOS varactor for millimeter-wave applications

Abstract

Keywords

ASJC Scopus subject areas

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