Abstract
The authors present a light extraction improvement at a low operation voltage from p-GaN patterned InGaN/GaN light-emitting diodes (LEDs) fabricated using size-controllable nanosphere lithography and subsequent inductively coupled plasma etching. A 300-nm polystyrene (PS) nanosphere array was used as an etching mask in order to produce ordered pillar patterns on the p-GaN layer, during which the top and bottom size of the pillars were tailored to optimize the electrical and optical properties by varying the diameter of the PS nanosphere masks. Three LEDs, without patterns and with pillar patterns of 210 nm and 240nm diameter, were compared with each other, in which the LED with 240 nm diameter pillar patterns showed the highest output power (32.6% higher than that of the LEDs without patterns) in both its electroluminescence and photoluminescence measurements.
| Original language | English |
|---|---|
| Journal | Japanese Journal of Applied Physics |
| Volume | 50 |
| Issue number | 10 PART 1 |
| DOIs | |
| Publication status | Published - 2011 Oct 1 |
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ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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The light extraction efficiency of p-GaN patterned InGaN/GaN light-emitting diodes fabricated by size-controllable nanosphere lithography. / Sim, Jae In; Lee, Byoung Gyu; Yang, Ji Won; Yoon, Hyung Do; Kim, Tae Geun.
In: Japanese Journal of Applied Physics, Vol. 50, No. 10 PART 1, 01.10.2011.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - The light extraction efficiency of p-GaN patterned InGaN/GaN light-emitting diodes fabricated by size-controllable nanosphere lithography
AU - Sim, Jae In
AU - Lee, Byoung Gyu
AU - Yang, Ji Won
AU - Yoon, Hyung Do
AU - Kim, Tae Geun
PY - 2011/10/1
Y1 - 2011/10/1
N2 - The authors present a light extraction improvement at a low operation voltage from p-GaN patterned InGaN/GaN light-emitting diodes (LEDs) fabricated using size-controllable nanosphere lithography and subsequent inductively coupled plasma etching. A 300-nm polystyrene (PS) nanosphere array was used as an etching mask in order to produce ordered pillar patterns on the p-GaN layer, during which the top and bottom size of the pillars were tailored to optimize the electrical and optical properties by varying the diameter of the PS nanosphere masks. Three LEDs, without patterns and with pillar patterns of 210 nm and 240nm diameter, were compared with each other, in which the LED with 240 nm diameter pillar patterns showed the highest output power (32.6% higher than that of the LEDs without patterns) in both its electroluminescence and photoluminescence measurements.
AB - The authors present a light extraction improvement at a low operation voltage from p-GaN patterned InGaN/GaN light-emitting diodes (LEDs) fabricated using size-controllable nanosphere lithography and subsequent inductively coupled plasma etching. A 300-nm polystyrene (PS) nanosphere array was used as an etching mask in order to produce ordered pillar patterns on the p-GaN layer, during which the top and bottom size of the pillars were tailored to optimize the electrical and optical properties by varying the diameter of the PS nanosphere masks. Three LEDs, without patterns and with pillar patterns of 210 nm and 240nm diameter, were compared with each other, in which the LED with 240 nm diameter pillar patterns showed the highest output power (32.6% higher than that of the LEDs without patterns) in both its electroluminescence and photoluminescence measurements.
UR - http://www.scopus.com/inward/record.url?scp=80054924309&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=80054924309&partnerID=8YFLogxK
U2 - 10.1143/JJAP.50.102101
DO - 10.1143/JJAP.50.102101
M3 - Article
AN - SCOPUS:80054924309
VL - 50
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 10 PART 1
ER -