The low-power and low-area PWM by light intensity for photoflash in 0.35-μm CMOS

Kwan Lee Woo, Ho Choi Won, Jae Min Young, Ki Kim Hoon, Soo-Won Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The pulse width modulator by light intensity is presented. Light intensity sensing is achieved by using capacitor, photodiode, and comparator. And IGBT driver has short circuit protection using delay cell. The pulse width modulator has the operating range of VMS from 0.5V to 2.9V. The pulse width modulator fabricated in 0.35-μm CMOS technology occupies 0.85mm x 0.56mm. This circuit consumes 1.2mA at 300Hz and 3.0V.

Original languageEnglish
Title of host publicationProceedings - IEEE International Symposium on Circuits and Systems
Pages1724-1727
Number of pages4
DOIs
Publication statusPublished - 2008 Sep 19
Event2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008 - Seattle, WA, United States
Duration: 2008 May 182008 May 21

Other

Other2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008
CountryUnited States
CitySeattle, WA
Period08/5/1808/5/21

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Woo, K. L., Won, H. C., Young, J. M., Hoon, K. K., & Kim, S-W. (2008). The low-power and low-area PWM by light intensity for photoflash in 0.35-μm CMOS. In Proceedings - IEEE International Symposium on Circuits and Systems (pp. 1724-1727). [4541770] https://doi.org/10.1109/ISCAS.2008.4541770