The low-power and low-area PWM by light intensity for photoflash in 0.35-μm CMOS

Kwan Lee Woo; Ho Choi Won; Jae Min Young; Ki Kim Hoon; Soo Won Kim

doi:10.1109/ISCAS.2008.4541770

The low-power and low-area PWM by light intensity for photoflash in 0.35-μm CMOS

Kwan Lee Woo, Ho Choi Won, Jae Min Young, Ki Kim Hoon, Soo Won Kim

* Honorary professors

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The pulse width modulator by light intensity is presented. Light intensity sensing is achieved by using capacitor, photodiode, and comparator. And IGBT driver has short circuit protection using delay cell. The pulse width modulator has the operating range of V_MS from 0.5V to 2.9V. The pulse width modulator fabricated in 0.35-μm CMOS technology occupies 0.85mm x 0.56mm. This circuit consumes 1.2mA at 300Hz and 3.0V.

Original language	English
Title of host publication	2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008
Pages	1724-1727
Number of pages	4
DOIs	https://doi.org/10.1109/ISCAS.2008.4541770
Publication status	Published - 2008
Event	2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008 - Seattle, WA, United States Duration: 2008 May 18 → 2008 May 21

Publication series

Name	Proceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)	0271-4310

Other

Other	2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008
Country/Territory	United States
City	Seattle, WA
Period	08/5/18 → 08/5/21

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/ISCAS.2008.4541770

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The low-power and low-area PWM by light intensity for photoflash in 0.35-μm CMOS. / Woo, Kwan Lee; Won, Ho Choi; Young, Jae Min et al.

2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008. 2008. p. 1724-1727 4541770 (Proceedings - IEEE International Symposium on Circuits and Systems).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Woo, KL, Won, HC, Young, JM, Hoon, KK & Kim, SW 2008, The low-power and low-area PWM by light intensity for photoflash in 0.35-μm CMOS. in 2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008., 4541770, Proceedings - IEEE International Symposium on Circuits and Systems, pp. 1724-1727, 2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008, Seattle, WA, United States, 08/5/18. https://doi.org/10.1109/ISCAS.2008.4541770

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abstract = "The pulse width modulator by light intensity is presented. Light intensity sensing is achieved by using capacitor, photodiode, and comparator. And IGBT driver has short circuit protection using delay cell. The pulse width modulator has the operating range of VMS from 0.5V to 2.9V. The pulse width modulator fabricated in 0.35-μm CMOS technology occupies 0.85mm x 0.56mm. This circuit consumes 1.2mA at 300Hz and 3.0V.",

author = "Woo, {Kwan Lee} and Won, {Ho Choi} and Young, {Jae Min} and Hoon, {Ki Kim} and Kim, {Soo Won}",

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language = "English",

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AU - Hoon, Ki Kim

AU - Kim, Soo Won

PY - 2008

Y1 - 2008

N2 - The pulse width modulator by light intensity is presented. Light intensity sensing is achieved by using capacitor, photodiode, and comparator. And IGBT driver has short circuit protection using delay cell. The pulse width modulator has the operating range of VMS from 0.5V to 2.9V. The pulse width modulator fabricated in 0.35-μm CMOS technology occupies 0.85mm x 0.56mm. This circuit consumes 1.2mA at 300Hz and 3.0V.

AB - The pulse width modulator by light intensity is presented. Light intensity sensing is achieved by using capacitor, photodiode, and comparator. And IGBT driver has short circuit protection using delay cell. The pulse width modulator has the operating range of VMS from 0.5V to 2.9V. The pulse width modulator fabricated in 0.35-μm CMOS technology occupies 0.85mm x 0.56mm. This circuit consumes 1.2mA at 300Hz and 3.0V.

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BT - 2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008

T2 - 2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008

Y2 - 18 May 2008 through 21 May 2008

ER -

The low-power and low-area PWM by light intensity for photoflash in 0.35-μm CMOS

Abstract

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