The modification of the electrical property in double-walled carbon nanotube devices with a self-assembled monolayer of molecules

Eun Kyoung Jeon, Hyo Suk Kim, Byoung Kye Kim, Ju Jin Kim, Jeong O. Lee, Cheol Jin Lee

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We have investigated the electrical transports of double-walled carbon nanotube field effect transistors (DWNT-FETs) with modified contacts. The CNT/Au metal contacts of DWNT-FETs were modified with a self-assembled monolayer of 2-aminoethanethiol molecules. In ambient air, the contact-modified DWNT-FETs showed a decreased conductance in the p-channel (negative gate voltages) and an increased conductance in the n-channel (positive gate voltages), while the original device showed p-type transport. In a vacuum, the n-channel current in the contact-modified DWNT-FET started to rise. We observed a clear n-type transport in the high vacuum. Almost no changes in the gate threshold voltages were observed by means of the contact-modification with a self-assembled monolayer. While the semiconducting DWNT-FET showed a clear transition from a p-type to n-type transistor with contact modification, no apparent changes were observed in semimetallic DWNT devices.

Original languageEnglish
Pages (from-to)4349-4352
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume8
Issue number9
DOIs
Publication statusPublished - 2008 Sep 1

Keywords

  • Carbon nanotube
  • Field effect transistor
  • Schottky barrier
  • Self-assembled monolayer

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

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