The oxide/nitride interface: A study for gate dielectrics and field passivation

B. P. Gila, B. Luo, Ji Hyun Kim, R. Mehandru, J. R. LaRoche, A. H. Onstine, E. Lambers, K. Siebein, C. R. Abernathy, F. Ren, S. J. Pearton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The study of the effects of substrate surface preparation of GaN, both in-situ and ex-situ and the subsequent deposition of dielectric materials is necessary to create a viable GaN FET technology. Surface preparation techniques have been explored using RHEED, AES, SIMS and C-V measurements to produce films of low interface trap density, 1-2E11 eV -1cm -2. A similar study of the as-fabricated HEMT surface was carried out to create a cleaning procedure prior to dielectric passivation. Dielectric films of Sc 2O 3 and MgO were deposited via gas-source MBE. Post-deposition materials characterization included AES, TEM, XRR and XPS, as well as gate pulse and isolation current measurements for the passivated HEMT devices. From this study, the relationship between the interface structure and chemistry and the quality of the oxide/nitride electrical interface has been determined. The resulting process has led to the near elimination of the current collapse phenomenon. In addition, the resulting oxide/nitride interface quality has allowed for the first demonstration of inversion in GaN.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsC.R. Abernathy, E.P. Gusev, D. Schlom, S. Stemmer
Pages385-396
Number of pages12
Volume786
Publication statusPublished - 2003
Externally publishedYes
EventFundamentals of Novel Oxide/Semiconductor Interfaces Symposium - Boston, MA., United States
Duration: 2003 Dec 12003 Dec 4

Other

OtherFundamentals of Novel Oxide/Semiconductor Interfaces Symposium
CountryUnited States
CityBoston, MA.
Period03/12/103/12/4

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Gila, B. P., Luo, B., Kim, J. H., Mehandru, R., LaRoche, J. R., Onstine, A. H., Lambers, E., Siebein, K., Abernathy, C. R., Ren, F., & Pearton, S. J. (2003). The oxide/nitride interface: A study for gate dielectrics and field passivation. In C. R. Abernathy, E. P. Gusev, D. Schlom, & S. Stemmer (Eds.), Materials Research Society Symposium - Proceedings (Vol. 786, pp. 385-396)