The post-annealing effects of GaN epilayer grown on N+-ion-implanted sapphire substrate

Junggeun Jhin, Pilkyu Kang, Dong Jin Byun, Eui Kwan Koh, Jae Sang Lee, Jae Hyung Lee

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Sapphire substrates have been widely adopted to grow high quality GaN epilayer despite the large differences of lattice constant and thermal expansion coefficient between them. So, GaN or AlN buffer layer on the sapphire was indispensably introduced before the GaN epilayer growth. Moreover, a pretreatment process prior to the buffer growth has been known to play a critical role in improving the GaN overgrown layer. Nitridation is a general and simple pretreatment at high temperature in N2 or NH3 ambience. A post-annealing process was employed to decrease lattice strain through thermal treatment, and the electrical properties such as Hall mobility and carrier concentration were improved by this increase of crystallinity. These results showed that improvement of the GaN epilayer can be achieved by combination of N+-ion-implantation pretreatment of sapphire substrate and a suitable post-annealing process.

Original languageEnglish
JournalJournal of the Korean Physical Society
Volume42
Issue numberSPEC.
Publication statusPublished - 2003 Feb 1

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pretreatment
sapphire
annealing
buffers
ambience
ions
ion implantation
thermal expansion
crystallinity
electrical properties
expansion
coefficients

Keywords

  • GaN
  • N-ion implantation
  • Post-annealing

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

The post-annealing effects of GaN epilayer grown on N+-ion-implanted sapphire substrate. / Jhin, Junggeun; Kang, Pilkyu; Byun, Dong Jin; Koh, Eui Kwan; Lee, Jae Sang; Lee, Jae Hyung.

In: Journal of the Korean Physical Society, Vol. 42, No. SPEC., 01.02.2003.

Research output: Contribution to journalArticle

Jhin, Junggeun ; Kang, Pilkyu ; Byun, Dong Jin ; Koh, Eui Kwan ; Lee, Jae Sang ; Lee, Jae Hyung. / The post-annealing effects of GaN epilayer grown on N+-ion-implanted sapphire substrate. In: Journal of the Korean Physical Society. 2003 ; Vol. 42, No. SPEC.
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