The potential efficiency of laser doped solar cells using photoluminescence imaging

Eunjoo Lee; Hyunwoo Lee; Ilhwan Kim; Junyoung Choi; Dongjun Oh; Jimyung Shim; Kyungyeun Cho; Jisun Kim; Hae Seok Lee; Soohong Lee; B. Hallam; S. R. Wenham

doi:10.1109/PVSC.2010.5614424

The potential efficiency of laser doped solar cells using photoluminescence imaging

Eunjoo Lee, Hyunwoo Lee, Ilhwan Kim, Junyoung Choi, Dongjun Oh, Jimyung Shim, Kyungyeun Cho, Jisun Kim, Hae Seok Lee, Soohong Lee, B. Hallam, S. R. Wenham

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In this work we evaluate the implied open circuit voltages (iVoc) at various stages of production of laser doped selective emitter (LDSE) solar cells using photoluminescence (PL) imaging The change of the iVoc values after the laser doping (LD) has shown that this process has minimal effect on cell performance. It is also found that the order of processes such as edge junction isolation and silicon nitride is of critical importance prior to light induced plating. If these processes are not performed in the correct order, localised shunts may form during the light induced plating (LIP) process which then inhibits plating near the edge of the cells. In this work, an impressive efficiency of 18.3% has been achieved, even though the fill factor was only 74.2% and the cell suffered from additional shading losses due to overplating. With the optimization of the LD and metallization processes cells have the potential to reach efficiencies of more than 19.2% on full size commercial substrates.

Original language	English
Title of host publication	Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Pages	1436-1439
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2010.5614424
Publication status	Published - 2010
Externally published	Yes
Event	35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States Duration: 2010 Jun 20 → 2010 Jun 25

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Country	United States
City	Honolulu, HI
Period	10/6/20 → 10/6/25

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2010.5614424

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Cite this

Lee, E., Lee, H., Kim, I., Choi, J., Oh, D., Shim, J., Cho, K., Kim, J., Lee, H. S., Lee, S., Hallam, B., & Wenham, S. R. (2010). The potential efficiency of laser doped solar cells using photoluminescence imaging. In Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010 (pp. 1436-1439). [5614424] (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2010.5614424

The potential efficiency of laser doped solar cells using photoluminescence imaging. / Lee, Eunjoo; Lee, Hyunwoo; Kim, Ilhwan; Choi, Junyoung; Oh, Dongjun; Shim, Jimyung; Cho, Kyungyeun; Kim, Jisun; Lee, Hae Seok; Lee, Soohong; Hallam, B.; Wenham, S. R.

Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. 2010. p. 1436-1439 5614424 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lee, E, Lee, H, Kim, I, Choi, J, Oh, D, Shim, J, Cho, K, Kim, J, Lee, HS, Lee, S, Hallam, B & Wenham, SR 2010, The potential efficiency of laser doped solar cells using photoluminescence imaging. in Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010., 5614424, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 1436-1439, 35th IEEE Photovoltaic Specialists Conference, PVSC 2010, Honolulu, HI, United States, 10/6/20. https://doi.org/10.1109/PVSC.2010.5614424

Lee, Eunjoo ; Lee, Hyunwoo ; Kim, Ilhwan ; Choi, Junyoung ; Oh, Dongjun ; Shim, Jimyung ; Cho, Kyungyeun ; Kim, Jisun ; Lee, Hae Seok ; Lee, Soohong ; Hallam, B. ; Wenham, S. R. / The potential efficiency of laser doped solar cells using photoluminescence imaging. Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. 2010. pp. 1436-1439 (Conference Record of the IEEE Photovoltaic Specialists Conference).

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abstract = "In this work we evaluate the implied open circuit voltages (iVoc) at various stages of production of laser doped selective emitter (LDSE) solar cells using photoluminescence (PL) imaging The change of the iVoc values after the laser doping (LD) has shown that this process has minimal effect on cell performance. It is also found that the order of processes such as edge junction isolation and silicon nitride is of critical importance prior to light induced plating. If these processes are not performed in the correct order, localised shunts may form during the light induced plating (LIP) process which then inhibits plating near the edge of the cells. In this work, an impressive efficiency of 18.3% has been achieved, even though the fill factor was only 74.2% and the cell suffered from additional shading losses due to overplating. With the optimization of the LD and metallization processes cells have the potential to reach efficiencies of more than 19.2% on full size commercial substrates.",

author = "Eunjoo Lee and Hyunwoo Lee and Ilhwan Kim and Junyoung Choi and Dongjun Oh and Jimyung Shim and Kyungyeun Cho and Jisun Kim and Lee, {Hae Seok} and Soohong Lee and B. Hallam and Wenham, {S. R.}",

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AU - Shim, Jimyung

AU - Cho, Kyungyeun

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AU - Lee, Hae Seok

AU - Lee, Soohong

AU - Hallam, B.

AU - Wenham, S. R.

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