Abstract
In this work we evaluate the implied open circuit voltages (iVoc) at various stages of production of laser doped selective emitter (LDSE) solar cells using photoluminescence (PL) imaging The change of the iVoc values after the laser doping (LD) has shown that this process has minimal effect on cell performance. It is also found that the order of processes such as edge junction isolation and silicon nitride is of critical importance prior to light induced plating. If these processes are not performed in the correct order, localised shunts may form during the light induced plating (LIP) process which then inhibits plating near the edge of the cells. In this work, an impressive efficiency of 18.3% has been achieved, even though the fill factor was only 74.2% and the cell suffered from additional shading losses due to overplating. With the optimization of the LD and metallization processes cells have the potential to reach efficiencies of more than 19.2% on full size commercial substrates.
| Original language | English |
|---|---|
| Title of host publication | Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010 |
| Pages | 1436-1439 |
| Number of pages | 4 |
| DOIs | |
| Publication status | Published - 2010 Dec 20 |
| Externally published | Yes |
| Event | 35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States Duration: 2010 Jun 20 → 2010 Jun 25 |
Publication series
| Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
|---|---|
| ISSN (Print) | 0160-8371 |
Other
| Other | 35th IEEE Photovoltaic Specialists Conference, PVSC 2010 |
|---|---|
| Country | United States |
| City | Honolulu, HI |
| Period | 10/6/20 → 10/6/25 |
Fingerprint
ASJC Scopus subject areas
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering
Cite this
The potential efficiency of laser doped solar cells using photoluminescence imaging. / Lee, Eunjoo; Lee, Hyunwoo; Kim, Ilhwan; Choi, Junyoung; Oh, Dongjun; Shim, Jimyung; Cho, Kyungyeun; Kim, Jisun; Lee, Haeseok; Lee, Soohong; Hallam, B.; Wenham, S. R.
Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. 2010. p. 1436-1439 5614424 (Conference Record of the IEEE Photovoltaic Specialists Conference).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - The potential efficiency of laser doped solar cells using photoluminescence imaging
AU - Lee, Eunjoo
AU - Lee, Hyunwoo
AU - Kim, Ilhwan
AU - Choi, Junyoung
AU - Oh, Dongjun
AU - Shim, Jimyung
AU - Cho, Kyungyeun
AU - Kim, Jisun
AU - Lee, Haeseok
AU - Lee, Soohong
AU - Hallam, B.
AU - Wenham, S. R.
PY - 2010/12/20
Y1 - 2010/12/20
N2 - In this work we evaluate the implied open circuit voltages (iVoc) at various stages of production of laser doped selective emitter (LDSE) solar cells using photoluminescence (PL) imaging The change of the iVoc values after the laser doping (LD) has shown that this process has minimal effect on cell performance. It is also found that the order of processes such as edge junction isolation and silicon nitride is of critical importance prior to light induced plating. If these processes are not performed in the correct order, localised shunts may form during the light induced plating (LIP) process which then inhibits plating near the edge of the cells. In this work, an impressive efficiency of 18.3% has been achieved, even though the fill factor was only 74.2% and the cell suffered from additional shading losses due to overplating. With the optimization of the LD and metallization processes cells have the potential to reach efficiencies of more than 19.2% on full size commercial substrates.
AB - In this work we evaluate the implied open circuit voltages (iVoc) at various stages of production of laser doped selective emitter (LDSE) solar cells using photoluminescence (PL) imaging The change of the iVoc values after the laser doping (LD) has shown that this process has minimal effect on cell performance. It is also found that the order of processes such as edge junction isolation and silicon nitride is of critical importance prior to light induced plating. If these processes are not performed in the correct order, localised shunts may form during the light induced plating (LIP) process which then inhibits plating near the edge of the cells. In this work, an impressive efficiency of 18.3% has been achieved, even though the fill factor was only 74.2% and the cell suffered from additional shading losses due to overplating. With the optimization of the LD and metallization processes cells have the potential to reach efficiencies of more than 19.2% on full size commercial substrates.
UR - http://www.scopus.com/inward/record.url?scp=78650110606&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=78650110606&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2010.5614424
DO - 10.1109/PVSC.2010.5614424
M3 - Conference contribution
SN - 9781424458912
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 1436
EP - 1439
BT - Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
ER -