The response characteristics of a gas sensor based on poly-3-hexylithiophene thin-film transistors

Jin Wook Jeong, Yang Doo Lee, Young Min Kim, Young Wook Park, Jin Hwan Choi, Tae Hyun Park, Choi Dong Soo, Song Myung Won, Il Ki Han, Byeong Kwon Ju

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71 Citations (Scopus)

Abstract

This paper studies the response characteristics of a gas sensor for organic thin-film transistors (OTFTs), made from spin-coated poly-3-hexylthiophene (P3HT) on a thermally grown SiO2/Si wafer. The gas response characteristics of OTFT sensors are observed from the change in the drain-source current, as a function of time, when the P3HT-based OTFT sensors of different channel widths are exposed to cycles of exposure to and the evacuation of NH3 gas, with concentration ranging from 10 to 100 ppm at room temperature in normal atmosphere. The measured drain-source current decreases rapidly with time after exposure to NH3 gas and the response characteristics of the drain-source current are seen to be higher for larger values of NH3 gas concentration. Also, the response characteristics of the OTFT sensor show that there is a shift in the threshold-voltage as well as a change in mobility after exposure to NH3 gas.

Original languageEnglish
Pages (from-to)40-45
Number of pages6
JournalSensors and Actuators, B: Chemical
Volume146
Issue number1
DOIs
Publication statusPublished - 2010 Apr 8

Keywords

  • Gas sensor
  • NH sensor
  • Organic semiconductor
  • Organic thin-film transistor
  • Poly-3-hexylthiophene

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Jeong, J. W., Lee, Y. D., Kim, Y. M., Park, Y. W., Choi, J. H., Park, T. H., Soo, C. D., Won, S. M., Han, I. K., & Ju, B. K. (2010). The response characteristics of a gas sensor based on poly-3-hexylithiophene thin-film transistors. Sensors and Actuators, B: Chemical, 146(1), 40-45. https://doi.org/10.1016/j.snb.2010.02.019