The revolution in SiGe: Impact on device electronics

D. L. Harame, S. J. Koester, G. Freeman, P. Cottrel, K. Rim, G. Dehlinger, D. Ahlgren, J. S. Dunn, D. Greenberg, A. Joseph, F. Anderson, Jae-Sung Rieh, S. A S T Onge, D. Coolbaugh, V. Ramachandran, J. D. Cressler, S. Subbanna

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

SiGe is having a major impact in device electronics. The most mature application is the SiGe BiCMOS technology which is in production throughout the world. The areas of most rapid growth are in CMOS where SiGe is being considered for a wide variety of elements including raised S/D, poly-SiGe Gates, in buffer layers to create a tensile strained Si layer, and as the conducting channel in MODFETs.

Original languageEnglish
Pages (from-to)9-17
Number of pages9
JournalApplied Surface Science
Volume224
Issue number1-4
DOIs
Publication statusPublished - 2004 Mar 15
Externally publishedYes

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Keywords

  • Device scaling
  • SiGe
  • SiGe BiCMOS
  • SiGe HBT

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Harame, D. L., Koester, S. J., Freeman, G., Cottrel, P., Rim, K., Dehlinger, G., Ahlgren, D., Dunn, J. S., Greenberg, D., Joseph, A., Anderson, F., Rieh, J-S., Onge, S. A. S. T., Coolbaugh, D., Ramachandran, V., Cressler, J. D., & Subbanna, S. (2004). The revolution in SiGe: Impact on device electronics. Applied Surface Science, 224(1-4), 9-17. https://doi.org/10.1016/j.apsusc.2003.08.086