The role of GaN/AlN double buffer layer in the crystal growth and photoluminescence of GaN nanowires

Heon Jin Choi, Dae Hee Kim, Tae Geun Kim, Yun Mo Sung

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4 Citations (Scopus)


Vapor-liquid-solid (VLS) growth of GaN nanowires was performed and GaN/AlN double buffer layer was employed to minimize the lattice mismatch between GaN nanowires and Si substrates. GaN nanowires grown on GaN/AlN/Si substrates showed the formation of straight nanowires with ∼50-100 nm diameter, while those grown on bare Si wafers showed formation of tangled nanowires with non-uniform diameters. High-resolution transmission electron microscopy (HRTEM) analyses on the GaN nanowires grown on GaN/AlN/Si showed high crystallinity with [1 0 -1] crystal growth direction. Furthermore, GaN nanowires grown on GaN/AlN/Si showed high intensity blue emission and almost negligible yellow luminescence.

Original languageEnglish
Pages (from-to)479-483
Number of pages5
JournalChemical Physics Letters
Issue number4-6
Publication statusPublished - 2005 Sep 26


ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Atomic and Molecular Physics, and Optics
  • Surfaces and Interfaces
  • Condensed Matter Physics

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