The role of P-type buffer layers between ZnO

AI and P a-SiC:H for improving fill factor and V oc of a-Si:H solar cells

Ji Eun Lee, Jin Won Chung, Jeong Chul Lee, Jun Sik Cho, Young Kuk Kim, Junsin Yi, Donghwan Kim, Jinsoo Song, Kyung Hoon Yoon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

This study addresses the role of p-type buffer layers between ZnO:AI (AZO) TCO and p a-SiC:H window layer. When AZO is used as a front TCO in conventional a-Si:H solar cells incorporating p a-SiC:H window, the fill factor (FF) significantly decreases in different with SnO 2:F (FTO). Various buffer layers with different conductivity and crystalline properties are inserted between AZO and p aSiC: H and solar cell performances are compared. The FF deterioration of AZO/p a-SiC:H cells is directly related to the interface potential barrier. This potential barrier can be controlled by tuning electron affinity and mobility gap as well as electrical conductivity of buffer layers. The p a-Si:H buffer improves FF up to 0.72, which results from high conductivity of buffer layer. The p a-Si:H buffers also improves FF although they have similarly low conductivity with p a-SiC:H because of low electron affinity and/or mobility gap.

Original languageEnglish
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages000717-000720
Number of pages4
DOIs
Publication statusPublished - 2009 Dec 1
Event2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States
Duration: 2009 Jun 72009 Jun 12

Other

Other2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
CountryUnited States
CityPhiladelphia, PA
Period09/6/709/6/12

Fingerprint

Buffer layers
Solar cells
Electron affinity
Electron mobility
Deterioration
Tuning
Crystalline materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Lee, J. E., Chung, J. W., Lee, J. C., Cho, J. S., Kim, Y. K., Yi, J., ... Yoon, K. H. (2009). The role of P-type buffer layers between ZnO: AI and P a-SiC:H for improving fill factor and V oc of a-Si:H solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 000717-000720). [5411181] https://doi.org/10.1109/PVSC.2009.5411181

The role of P-type buffer layers between ZnO : AI and P a-SiC:H for improving fill factor and V oc of a-Si:H solar cells. / Lee, Ji Eun; Chung, Jin Won; Lee, Jeong Chul; Cho, Jun Sik; Kim, Young Kuk; Yi, Junsin; Kim, Donghwan; Song, Jinsoo; Yoon, Kyung Hoon.

Conference Record of the IEEE Photovoltaic Specialists Conference. 2009. p. 000717-000720 5411181.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, JE, Chung, JW, Lee, JC, Cho, JS, Kim, YK, Yi, J, Kim, D, Song, J & Yoon, KH 2009, The role of P-type buffer layers between ZnO: AI and P a-SiC:H for improving fill factor and V oc of a-Si:H solar cells. in Conference Record of the IEEE Photovoltaic Specialists Conference., 5411181, pp. 000717-000720, 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009, Philadelphia, PA, United States, 09/6/7. https://doi.org/10.1109/PVSC.2009.5411181
Lee JE, Chung JW, Lee JC, Cho JS, Kim YK, Yi J et al. The role of P-type buffer layers between ZnO: AI and P a-SiC:H for improving fill factor and V oc of a-Si:H solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference. 2009. p. 000717-000720. 5411181 https://doi.org/10.1109/PVSC.2009.5411181
Lee, Ji Eun ; Chung, Jin Won ; Lee, Jeong Chul ; Cho, Jun Sik ; Kim, Young Kuk ; Yi, Junsin ; Kim, Donghwan ; Song, Jinsoo ; Yoon, Kyung Hoon. / The role of P-type buffer layers between ZnO : AI and P a-SiC:H for improving fill factor and V oc of a-Si:H solar cells. Conference Record of the IEEE Photovoltaic Specialists Conference. 2009. pp. 000717-000720
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