The subbands and resonant tunneling of a two-dimensional electron gas in a HgCdTe metal-insulator-semiconductor structure

Ki Hong Jin, Sangsig Kim, Man Young Sung, Chul Chung Yun, Ung Kim Sun, Jang Park Mann

Research output: Contribution to journalArticle

Abstract

Electron tunneling spectroscopy was performed at 77 and 4.2 K for the measurement of the tunneling current as a function of the bias voltage, which provided the information on the subbands and resonant tunneling of a two-dimensional electron gas confined in an n-type HgCdTe accumulation layer in the Hg1-xCdxTe-ZnS-In junction structure. Our analysis of the tunneling current versus applied bias measured at 77 K indicates that the subband energy level in a Hg0.79Cd0.21Te accumulation layer of a HgCdTe metal-insulator-semiconductor (MIS) structure is located at - 59 meV for the ground state and - 13 meV for the first excited state relative to the Fermi level. In addition, negative differential resistance was observed for the Hg0.79Cd0.21Te at 4.2 K when the applied bias was larger than the difference between the work function of Indium and the electron affinity of ZnS. Our calculation based on transfer matrix method suggests that this negative conductance be attributed to Fowler-Nordheim tunneling induced by adjusting the transmission width of a ZnS barrier.

Original languageEnglish
Pages (from-to)2201-2204
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number4 A
Publication statusPublished - 2001 Apr 1

Fingerprint

Resonant tunneling
Electron affinity
Transfer matrix method
Two dimensional electron gas
Electron tunneling
resonant tunneling
MIS (semiconductors)
Bias voltage
Fermi level
Excited states
Field emission
Indium
Electron energy levels
Ground state
electron gas
Spectroscopy
Semiconductor materials
Metals
negative conductance
electron tunneling

Keywords

  • 2D electron gas
  • Fowler-Nordheim tunneling
  • HgCdTe
  • Negative differential resistance
  • Tunneling spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

The subbands and resonant tunneling of a two-dimensional electron gas in a HgCdTe metal-insulator-semiconductor structure. / Jin, Ki Hong; Kim, Sangsig; Sung, Man Young; Yun, Chul Chung; Sun, Ung Kim; Mann, Jang Park.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 40, No. 4 A, 01.04.2001, p. 2201-2204.

Research output: Contribution to journalArticle

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AU - Kim, Sangsig

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AU - Yun, Chul Chung

AU - Sun, Ung Kim

AU - Mann, Jang Park

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N2 - Electron tunneling spectroscopy was performed at 77 and 4.2 K for the measurement of the tunneling current as a function of the bias voltage, which provided the information on the subbands and resonant tunneling of a two-dimensional electron gas confined in an n-type HgCdTe accumulation layer in the Hg1-xCdxTe-ZnS-In junction structure. Our analysis of the tunneling current versus applied bias measured at 77 K indicates that the subband energy level in a Hg0.79Cd0.21Te accumulation layer of a HgCdTe metal-insulator-semiconductor (MIS) structure is located at - 59 meV for the ground state and - 13 meV for the first excited state relative to the Fermi level. In addition, negative differential resistance was observed for the Hg0.79Cd0.21Te at 4.2 K when the applied bias was larger than the difference between the work function of Indium and the electron affinity of ZnS. Our calculation based on transfer matrix method suggests that this negative conductance be attributed to Fowler-Nordheim tunneling induced by adjusting the transmission width of a ZnS barrier.

AB - Electron tunneling spectroscopy was performed at 77 and 4.2 K for the measurement of the tunneling current as a function of the bias voltage, which provided the information on the subbands and resonant tunneling of a two-dimensional electron gas confined in an n-type HgCdTe accumulation layer in the Hg1-xCdxTe-ZnS-In junction structure. Our analysis of the tunneling current versus applied bias measured at 77 K indicates that the subband energy level in a Hg0.79Cd0.21Te accumulation layer of a HgCdTe metal-insulator-semiconductor (MIS) structure is located at - 59 meV for the ground state and - 13 meV for the first excited state relative to the Fermi level. In addition, negative differential resistance was observed for the Hg0.79Cd0.21Te at 4.2 K when the applied bias was larger than the difference between the work function of Indium and the electron affinity of ZnS. Our calculation based on transfer matrix method suggests that this negative conductance be attributed to Fowler-Nordheim tunneling induced by adjusting the transmission width of a ZnS barrier.

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